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參數(shù)資料
| 型號： | FB180SA10 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 137K |
| 代理商： | FB180SA10 |
FB180SA10
www.irf.com
3
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
4.5V
1
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
4.5V
1
10
100
1000
4
5
6
7
8
9
10
VDS
20μs PULSE WIDTH
V , Gate-to-Source Voltage (V)
I
D
T = 25 C
T = 150 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
(
D
V
=
I
=
GS
D
10V
180A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FB180SA10P | 制造商:Vishay Semiconductors 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.0065Ohm;ID 180A;SOT-227;PD 480W;VGS +/-20 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 100V 180A 4-Pin SOT-227 制造商:Vishay Intertechnologies 功能描述:Single N-Channel 100 V 0.0065 Ohms Surface Mount Power Mosfet - SOT-227 制造商:Vishay Semiconductors 功能描述:N CH MOSFET, 100V, 180A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes |
| FB180SA10P | 制造商:Vishay Semiconductors 功能描述:HEXFET POWER MOSFET |
| FB180SA10PBF | 制造商:Vishay Semiconductors 功能描述:MOSFET N SOT-227 TUBE 10 |
| FB182503ELV1NP | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS 9 - Trays 制造商:Infineon Technologies 功能描述:Infineon Technologies FB182503ELV1NP Interface Misc |
| FB182503ELV2NP | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS 9 |
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