參數(shù)資料
型號(hào): FA13842
廠商: FUJI ELECTRIC HOLDINGS CO., LTD.
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: CMOS IC(For Switching Power Supply Control)
中文描述: CMOS集成電路開關(guān)電源控制(對(duì))
文件頁數(shù): 11/15頁
文件大小: 151K
代理商: FA13842
FA13842, 13843, 13844, 13845
11
Fig. 12
Fig. 13
Fig. 14
Fig. 11
~ +
~
DB
R1
D1
C2
+
MOSFET
Rs
6
1
7
FA13842
R4
R6
D5
R7
R8
PC1
Tr1
Tr2
R15
Tr5
R16
PC1
C6
R3
C1
T1
D6
R13
Tr4
+
C7
R14
AC INPUT
+
~
+
~
R1
D1
C2
+
MOSFET
Rs
6
1
7
FA13842
R4
R6
D5
R7
R8
PC1
Tr1
Tr2
C6
R3
DB
ZD2
PC1
C1
T1
D6
+C7
R9
AC INPUT
+
~
+
~
6
1
7
FA13842
R4
D5
R6
Tr1
Tr2
ZD1
C6
R3
DB
R1
D1
C2
MOSFET
Rs
C1
T1
AC INPUT
+
+
+
~
6
1
3
7
FA13842
R4
R6
D5
Tr1
Tr2
C6
R3
~
R1
D1
C2
+
MOSFET
R12
Tr3
C8
R10
R11
Rs
C1
T1
AC INPUT
+
3-1 The method of detecting an overvoltage (detection
on primary side)
A typical latched shutdown circuit to protect against
overvoltages detected on the primary side is shown in Fig. 11.
When the secondary voltage increases in the flyback circuit,
the voltage of the bias winding also increases in proportion.
When this voltage increase is detected by zener diode ZD1, a
latched shutdown is accomplished. As the secondary voltage
is detected through a transformer, detection accuracy is low.
3-2 The method of detecting an overvoltage (detection
on secondary side)
A typical latched shutdown circuit to protect against
overvoltages detected on the secondary side is shown in
Fig. 12.
The detected voltage accuracy is high compared to
overvoltage detection on the primary side.
3-3 The method of detecting an overcurrent (detection
of primary current)
A typical primary overcurrent detection circuit is shown in
Fig. 13.
3-4 The method of detecting an overcurrent (detection
of secondary current)
A typical secondary overcurrent detection circuit is shown in
Fig. 14.
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