參數(shù)資料
型號(hào): FA01219A
廠商: Mitsubishi Electric Corporation
英文描述: GaAs FET HYBRID IC
中文描述: 砷化鎵場(chǎng)效應(yīng)管混合集成電路
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 23K
代理商: FA01219A
FA01219A
MITSUBISHI SEMICONDUCTOR GaAs FET
GaAs FET HYBRID IC
Nov. ′97
DESCRIPTION
FA01219A is RF Hybrid IC designed for 0.8GHz band
small size handheld radio.
FEATURES
Low voltage
High gain
High efficiency
High power
3.5V
22.5B
50%
30.5dBm
APPLICATION
PDC0.8GHz
Unit:mm
RF INPUT RF OUTPUT
V
D1
GND
GND
GND
V
D2
V
G1,2
4
2.0
6.0
0.8
10.0
GND
GND
tolerance:±0.2
Typ
Max
958
8
Min
925
Limits
Parameter
Test conditions
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D
P
in
T
C
(op)
T
stg
Storage temperature
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
f
P
in
I
Dt
ρ
in
ACP50
ACP100
2fo
3fo
Total drain current
Return loss
±50kHz adjacent channel power
±100kHz adjacent channel power
2nd harmonics
3rd harmonics
-6
-47
-62
-30
-30
720
MHz
dBm
mA
dB
dBc
dBc
dBc
dBc
Po=30.5dBm
V
D1
=V
D2
=3.5V
V
G1,2
=-2.5V
Z
G
=Z
L
=50
(
π
/4DQPSK)
640
5
Parameter
Ratings
4.5
15
-20 to +85
-30 to +90
Unit
V
dBm
C
C
Drain voltage
Input power
Operation case temperature
Frequency
Input power
Tc
25C
25C
Condition
Po
30.5dBm
Z
G
=Z
L
=50
Ditto
(CW)
3
2
1
4
5
6
7
8
3
2
1
5
6
7
8
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