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參數(shù)資料
| 型號(hào)： | FA01220A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CAP CER 2.2UF 6.3V X5R 0402 |
| 中文描述： | 砷化鎵場(chǎng)效應(yīng)管混合集成電路 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | FA01220A |
FA01220A
MITSUBISHI SEMICONDUCTOR GaAs FET
GaAs FET HYBRID IC
Nov. ′97
dBc
dBc
dBc
DESCRIPTION
FA01220A is RF Hybrid IC designed for 1.5GHz band
small size handheld radio.
FEATURES
Low voltage
High gain
High efficiency
High power
3.5V
20.5B
50%
30.5dBm
APPLICATION
PDC1.5GHz
Unit:mm
2.0
6.0
0.8
10.0
GND
GND
1
2
3
4
8
7
6
5
tolerance:±0.2
Typ
–
Max
1453
10
Min
1429
–
–
–
–
–
–
–
Limits
Parameter
Test conditions
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D
P
in
T
C
(op)
T
stg
Storage temp
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
f
P
in
I
Dt
ρ
in
ACP50
ACP100
2fo
3fo
Total drain current
Return loss
±50kHz adjacent channel power
±100kHz adjacent channel power
2nd harmonics
3rd harmonics
-6
-47
-62
-30
-30
720
MHz
dBm
mA
dB
dBc
P
O
=30.5dBm
V
D1
=V
D2
=3.5V
V
G1,2
=-2.5V
Z
G
=Z
L
=50
(
π
/4DQPSK)
–
–
–
640
–
–
(7)
Parameter
Ratings
4.5
15
-20 to +85
-30 to +90
Unit
V
dBm
C
C
Drain voltage
Input power
Operating case temp
Frequency
Input power
Condition
Tc=25C, Po
≤
30.5dBm
Tc=25C, Z
G
=Z
L
=50
Ditto
(CW)
RF INPUT RF OUTPUT
V
D1
GND
GND
GND
V
D2
V
G1,2
4
3
2
1
5
6
7
8
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