- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375705 > F49L800UA (Elite Semiconductor Memory Technology Inc.) 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | F49L800UA |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| 中文描述： | 8兆位（100萬(wàn)x 8/512K × 16）3V時(shí)僅閃存的CMOS |
| 文件頁(yè)數(shù)： | 22/47頁(yè) |
| 文件大?。?/td> | 435K |
| 代理商： | F49L800UA |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)當(dāng)前第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)
ES MT
10.2 Program/Erase Operation
Table 11.
WE
Controlled Program/Erase Operations(T
A
= 0C to 70C, V
CC
= 2.7V~3.6V)
F49L800UA/F49L800BA
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision: 1.2 22/47
-70
-90
Symbol
Description
Min.
Max.
Min.
Max.
Unit
t
WC
Write Cycle Time (Note 1)
70
90
ns
t
AS
Address Setup Time
0
0
ns
t
AH
Address Hold Time
45
45
ns
t
DS
Data Setup Time
35
35
ns
t
DH
Data Hold Time
0
0
ns
t
OES
Output Enable Setup Time
0
0
ns
t
GHWL
Read Recovery Time Before
Write (
OE
High to
WE
l
ow)
0
0
ns
t
CS
CE
Setup Time
0
0
ns
t
CH
CE
Hold Time
0
0
ns
t
WP
Write Pulse Width
35
35
ns
t
WPH
Write Pulse Width High
30
30
ns
t
WHWH1
Programming Operation (Note 2)
(Byte program time)
9(typ.)
9(typ.)
us
t
WHWH2
Sector Erase Operation (Note 2)
0.7(typ.)
0.7(typ.)
sec
t
VCS
V
CC
Setup Time (Note 1)
50
50
us
t
RB
Recovery Time from RY/
BY
0
0
ns
t
busy
Program/Erase Valid to RY/
BY
Delay
90
90
ns
Notes :
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| F49L800UA-70T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA-90T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F50-A24-3002A90 | RF Coaxial Connectors |
| F5001H | INTELIGENT POWER SWITCH |
| F5001 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F49L800UA_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA-70TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA-70TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。