- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375705 > F5001 (Polyfet RF Devices) PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | F5001 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 專利金金屬化硅柵增強型射頻功率VDMOS晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | F5001 |
RF CHARACTERISTICS ( WATTS OUTPUT )
0.5
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOS TRANSISTOR
0.5Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
10Watts
13
C
o
200
-65
to 150
0.4 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
dB
%
Relative
8
35
0.1
20:1
Idq =
Idq =
Idq =
0.1
0.1
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 2000 MHz
F = 2000 MHz
F = 2000 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
65
0.2
1
7
1
0.1
4.5
0.6
4
0.4
3
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.01
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.02
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 1
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
C
o
C
o
C/W
o
F5001
polyfet rf devices
8/1/97
相關PDF資料 |
PDF描述 |
|---|---|
| F5033 | 30V N-Channel PowerTrench MOSFET |
| F50N06LE | 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs |
| F5CP | 2.5 x 2.0mm package F5CP / F6CP Dimensions & Pin Configuration |
| F5D1 | AlGaAs INFRARED EMITTING DIODE |
| F5D2 | AlGaAs INFRARED EMITTING DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| F50010 NA113 | 制造商:Alpha Wire Company 功能描述:HEAT SHRINK TUBE 10 NAT 25X2' |
| F5001-08 | 制造商:KAYNAR (ALCOA) 功能描述: |
| F50010-NA113 | 制造商:Alpha Wire 功能描述: |
| F500-12 | 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series |
| F50012 NA113 | 制造商:Alpha Wire Company 功能描述:SLEEVE, HEATSHRINK 260 DEG 3.8 I/D 25X2FT 制造商:Alpha Wire Company 功能描述:HEAT SHRINK TUBE 12 NAT 25X2' |
發(fā)布緊急采購，3分鐘左右您將得到回復。