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參數(shù)資料
| 型號(hào)： | F49L160BA-70T |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP1-48 |
| 文件頁數(shù)： | 51/51頁 |
| 文件大?。?/td> | 454K |
| 代理商： | F49L160BA-70T |
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ES MT
F49L160UA/F49L160BA
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2006
Revision: 1.3 51/51
Important Notice
All rights reserved.
No part of this document may be reproduced or duplicated in any form
or by any means without the prior permission of EFST.
The contents contained in this document are believed to be accurate at
the time of publication. EFST assumes no responsibility for any error in
this document, and reserves the right to change the products or
specification in this document without notice.
The information contained herein is presented only as a guide or
examples for the application of our products. No responsibility is
assumed by EFST for any infringement of patents, copyrights, or other
intellectual property rights of third parties which may result from its use.
No license, either express , implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of EFST or
others.
Any semiconductor devices may have inherently a certain rate of
failure. To minimize risks associated with customer's application,
adequate design and operating safeguards against injury, damage, or
loss from such failure, should be provided by the customer when
making application designs.
EFST 's products are not authorized for use in critical applications such
as, but not limited to, life support devices or system, where failure or
abnormal operation may directly affect human lives or cause physical
injury or property damage. If products described here are to be used for
such kinds of application, purchaser must do its own quality
assurance testing appropriate to such applications.
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PDF描述 |
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| F49L160BA-90T | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160UA | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160UA-70T | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160UA-90T | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L400BA | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F49L160BA-70TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160BA-90T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160BA-90TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160BA-90TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160UA | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
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