參數(shù)資料
型號(hào): F49L160BA-70T
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
中文描述: 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP1-48
文件頁(yè)數(shù): 35/51頁(yè)
文件大?。?/td> 454K
代理商: F49L160BA-70T
ES MT
F49L160UA/F49L160BA
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2006
Revision: 1.3 35/51
Figure 13. Embedded Sector Erase Algorithm Flowchart
Start
Write Data AAH Address 555H
Embedded Sector Erease Completed
Last Sector
to Erase
Yes
No
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Address SA
Data Poll from System
Data = FFH
No
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L160BA-70TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory