參數(shù)資料
型號: EVAL-ADF4150HVEB1Z
廠商: Analog Devices Inc
文件頁數(shù): 23/28頁
文件大?。?/td> 0K
描述: EVAL BOARD FOR ADF4150HV
標準包裝: 1
類型: 整數(shù) N 合成器(RF)
頻率: 3GHz
適用于相關產品: ADF4150HV
已供物品:
ADF4150HV
Rev. 0 | Page 4 of 28
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
RF OUTPUT CHARACTERISTICS
Output Frequency Using RF Output
Dividers
31.25
MHz
500 MHz VCO input and divide-by-16 selected
Harmonic Content (Second)
19
dBc
Fundamental VCO output
20
dBc
Divided VCO output
Harmonic Content (Third)
13
dBc
Fundamental VCO output
10
dBc
Divided VCO output
Minimum RF Output Power2
4
dBm
Programmable in 3 dB steps
Maximum RF Output Power2
5
dBm
Programmable in 3 dB steps
Output Power Variation vs. Supply
±1
dB
Pull-up supply on Pin 18 and Pin 19 varied
from 3.0 V to 3.6 V
Output Power Variation vs. Temperature
±1
dB
From 40°C to +85°C
Level of Signal with RF Mute Enabled
37
dBm
PDBRF pin brought low; RF = 2 GHz
NOISE CHARACTERISTICS
Normalized In-Band Phase Noise
Floor (PNSYNTH)3
213
dBc/Hz
Low noise mode
203
dBc/Hz
Low spur mode
Normalized 1/f Noise (PN1_f)4
113
dBc/Hz
Low noise mode
108
dBc/Hz
Low spur mode
RF Output Divider Noise Floor
155
dBc/Hz
Measured at 10 MHz offset
Spurious Signals Due to PFD Frequency
70
dBc
At RFOUT+/RFOUT pins
85
dBc
At VCO output
1 TA = 25°C; AVDD = DVDD = 3.3 V; prescaler = 8/9; fREFIN = 100 MHz; fPFD = 25 MHz; fRF = 1.75 GHz.
2 Using 50 Ω resistors to AVDD, into a 50 Ω load.
3 This figure can be used to calculate phase noise for any application. To calculate in-band phase noise performance as seen at the VCO output, use the following formula:
PNSYNTH = PNTOT 10 log(fPFD) 20 log N.
4 The PLL phase noise is composed of flicker (1/f) noise plus the normalized PLL noise floor. The flicker noise is specified at a 10 kHz offset and normalized to 1 GHz. The
formula for calculating the 1/f noise contribution at an RF frequency (fRF) and at a frequency offset (f) is given by PN = PN1_f + 10 log(10 kHz/f) + 20 log(fRF/1 GHz). Both
the normalized phase noise floor and flicker noise are modeled in ADIsimPLL.
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