參數(shù)資料
型號(hào)： EVAL-ADF4150HVEB1Z
廠商： Analog Devices Inc
文件頁(yè)數(shù)： 19/28頁(yè)
文件大?。?/td> 0K
描述： EVAL BOARD FOR ADF4150HV
標(biāo)準(zhǔn)包裝： 1
類型： 整數(shù) N 合成器（RF）
頻率： 3GHz
適用于相關(guān)產(chǎn)品： ADF4150HV
已供物品： 板
ADF4150HV
Rev. 0 | Page 26 of 28
OUTPUT MATCHING
The circuit shown in Figure 34 provides a good broadband
match to 50 Ω for frequencies from 250 MHz to 3.0 GHz. The
maximum output power in this case is approximately 5 dBm.
The inductor can be increased for operation below 250 MHz.
Both single-ended architectures can be examined using the
EVAL-ADF4150HVEB1Z evaluation board.
The output of the ADF4150HV can be matched in a number of
ways for optimum operation; the most basic is to connect a 50 Ω
resistor to AVDD. A dc bypass capacitor of 100 pF is connected
in series, as shown in Figure 33. Because the resistor is not fre-
quency dependent, this method provides a good broadband
match. When connected to a 50 Ω load, this circuit typically
gives a differential output power equal to the values chosen by
Bits[DB4:DB3] in Register 4.
09
05
8-
03
2
22nH
1nF
RFOUT+
RFOUT–
AVDD
50
22nH
1nF
50
100
50
100pF
RFOUT
AVDD
50
09
05
8-
02
9
Figure 33. Simple ADF4150HV Output Stage
Another solution is to connect a shunt inductor (acting as an RF
choke) to AVDD. This solution can help provide a better narrow-
band match and, therefore, more output power. However, because
the output stage is open-collector, it is recommended that a
termination resistor be used in addition to the RF choke to give
a defined output impedance. The termination resistor can be
either 50 Ω in parallel with the RF choke or 100 Ω connected
across the RF output pins.
Figure 34. Optimum ADF4150HV Output Stage
If differential outputs are not needed, the unused output can be
terminated, or both outputs can be combined using a balun.
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