參數(shù)資料
型號(hào)： EVAL-AD7623CBZ
廠商： Analog Devices Inc
文件頁(yè)數(shù)： 26/28頁(yè)
文件大?。?/td> 0K
描述： BOARD EVALUATION FOR AD7623
標(biāo)準(zhǔn)包裝： 1
系列： PulSAR®
ADC 的數(shù)量： 1
位數(shù)： 16
采樣率（每秒）： 1.33M
數(shù)據(jù)接口： 串行，并聯(lián)
輸入范圍： ±VREF
在以下條件下的電源（標(biāo)準(zhǔn)）： 50mW @ 1.33MSPS
工作溫度： -40°C ~ 85°C
已用 IC / 零件： AD7623
已供物品： 板
相關(guān)產(chǎn)品： AD7623ASTZ-ND - IC ADC 16BIT 1.33MSPS DFF 48LQFP
AD7623ACPZ-ND - IC ADC 16BIT 1.33MSPS 48LFCSP
AD7623ACPZRL-ND - IC ADC 16BIT 1.33MSPS 48LFCSP
AD7623ASTZRL-ND - IC ADC 16BIT 1.33MSPS DFF 48LQFP
AD7623
Rev. 0 | Page 7 of 28
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Rating
Analog Inputs/Outputs
IN+1, IN, REF, REFBUFIN, TEMP,
INGND, REFGND to AGND
AVDD + 0.3 V to
AGND 0.3 V
Ground Voltage Differences
AGND, DGND, OGND
±0.3 V
Supply Voltages
AVDD, DVDD
–0.3 V to +2.7 V
OVDD
–0.3 V to +3.8 V
AVDD to DVDD
±2.8 V
AVDD to OVDD
+2.8 V to 3.8 V
OVDD to DVDD2
≤ +0.3 V if DVDD < 2.3 V
Digital Inputs
0.3 V to +5.5 V
PDREF, PDBUF3
±20 mA
Internal Power Dissipation4
700 mW
Internal Power Dissipation5
2.5 W
Junction Temperature
125°C
Storage Temperature Range
–65°C to +125°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1 See the Analog Inputs section.
2 See the Power Supply section.
3 See the Voltage Reference Input section.
4 Specification is for the device in free air: 48-Lead LQFP; θJA = 91°C/W,
θJC = 30°C/W.
5 Specification is for the device in free air: 48-Lead LFCSP; θJA = 26°C/W.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product
features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to
high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid
performance degradation or loss of functionality.
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