參數(shù)資料
型號(hào)： EN29LV160AT-70TCP
廠商： Electronic Theatre Controls, Inc.
英文描述： Replaced by PTN78000W :
中文描述： 16兆位（2048K × 8 -位/ 1024 kX的16位）閃存
文件頁(yè)數(shù)： 13/43頁(yè)
文件大?。?/td> 930K
代理商： EN29LV160AT-70TCP
COMMAND DEFINITIONS
The operations of the EN29LV160A are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register. The sequences for the
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,
incorrect data values or improper sequences will reset the device to Read Mode.
Table 9. EN29LV160A Command Definitions
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/07
EN29LV160A
Bus Cycles
1
st
Write Cycle
Add
RA
xxx
2
nd
Write Cycle
Add
3
rd
Write Cycle
Add
4
th
Write Cycle
Add
000
100
000
200
x01
x02
x01
x02
(SA)
X02
(SA)
X04
5
th
Write Cycle
Add
6
th
Write Cycle
Add
Command
Sequence
C
Data
RD
F0
Data
Data
Data
7F
1C
7F
1C
22C4
C4
2249
49
XX00
XX01
00
01
Data
Data
Read
Reset
1
1
Word
555
2AA
555
Manufacturer
ID
Byte
4
AAA
AA
555
55
AAA
90
Word
Byte
Word
Byte
555
AAA
555
AAA
2AA
555
2AA
555
2AA
555
AAA
555
AAA
Device ID
Top Boot
Device ID
Bottom Boot
4
AA
55
90
4
AA
55
90
Word
555
555
A
Sector Protect
Verify
Byte
4
AAA
AA
555
55
AAA
90
Word
Byte
Word
Byte
555
AAA
555
AAA
XXX
XXX
555
AAA
555
AAA
xxx
xxx
55
AA
2AA
555
2AA
555
PA
XXX
2AA
555
2AA
555
555
AAA
555
AAA
555
AAA
555
AAA
Program
4
AA
55
A0
PA
PD
Unlock Bypass
3
AA
55
20
Unlock Bypass Program
Unlock Bypass Reset
2
2
A0
90
PD
00
555
AAA
555
AAA
2AA
555
2AA
555
555
AAA
Word
Byte
Word
Byte
Chip Erase
6
AA
55
80
AA
55
10
Sector Erase
6
AA
55
80
AA
55
SA
30
Erase Suspend
Erase Resume
1
1
B0
30
Word
Byte
CFI Query
1
98
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A19-A12 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program
or Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read
array data using the standard read timings, with the only difference in that if it reads at an address
相關(guān)PDF資料
PDF描述
EN29LV160AT-70TI Replaced by PTN78000W :
EN29LV160AT-70TIP Replaced by PTN78000W :
EN29LV160AT-90BC Replaced by PTN78000W : 12VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE
EN29LV160AT-90BCP Replaced by PTN78000W :
EN29LV160AT-90BI Replaced by PTN78000W :
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29LV160BB-70BIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash 制造商:Eon Silicon Solution Inc 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash
EN29LV160BT-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash
EN29LV160CB-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:FLASH, 3V Read Program Erase 16 Megabit (2M x 8 / 1M x 16) 70ns TSOP
EN29LV320AT-70TCP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV320A Series, 32 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash
EN29LV320B-70TCP 制造商:EON SILICON SOLUTION INC 功能描述:32 Megabit, CMOS, 3V, Boot Sector Flash Memory, TSOP-48
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