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參數(shù)資料
| 型號： | EN29LV160AT-70TCP |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Replaced by PTN78000W : |
| 中文描述： | 16兆位（2048K × 8 -位/ 1024 kX的16位）閃存 |
| 文件頁數(shù)： | 10/43頁 |
| 文件大?。?/td> | 930K |
| 代理商： | EN29LV160AT-70TCP |
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COMMON FLASH INTERFACE (CFI)
The common flash interface (CFI) specification outlines device and host systems software
interrogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-
independent, and forward- and backward-compatible for the specified flash device families. Flash
vendors can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h in word mode (or address AAh in byte mode), any time the device is ready to read
array data.
The system can read CFI information at the addresses given in Tables 5-8. In word mode, the
upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must
write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The
device enters the CFI query mode and the system can read CFI data at the addresses given in
Tables 5–8. The system must write the reset command to return the device to the autoselect mode.
Table 5. CFI Query Identification String
Adresses
(Word Mode)
(Byte Mode)
Data
10h
11h
12h
24h
0059h
13h
14h
28h
0000h
15h
16h
2Ch
0000h
17h
18h
30h
0000h
19h
1Ah
34h
0000h
Table 6. System Interface String
Addresses
(Word Mode)
(Byte Mode)
Data
1Bh
36h
0027h
Vcc Min (write/erase)
D7-D4: volt, D3 –D0: 100 millivolt
1Ch
38h
0036h
Vcc Max (write/erase)
D7-D4: volt, D3 –D0: 100 millivolt
1Dh
3Ah
0000h
Vpp Min. voltage (00h = no Vpp pin present)
1Eh
3Ch
0000h
Vpp Max. voltage (00h = no Vpp pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2^N
μ
s
20h
40h
0000h
Typical timeout for Min, size buffer write 2^N
μ
s (00h = not
supported)
21h
42h
000Ah
Typical timeout per individual block erase 2^N ms
22h
44h
0000h
Typical timeout for full chip erase 2^N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2^N times typical
24h
48h
0000h
Max. timeout for buffer write 2^N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2^N times typical
26h
4Ch
0000h
Max timeout for full chip erase 2^N times typical (00h = not
supported)
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/07
EN29LV160A
Adresses
Description
20h
22h
0051h
0052h
Query Unique ASCII string “QRY”
26h
0002h
Primary OEM Command Set
2Ah
0040h
Address for Primary Extended Table
2Eh
0000h
Alternate OEM Command set (00h = none exists)
32h
0000h
Address for Alternate OEM Extended Table (00h = none exists
Addresses
Description
相關PDF資料 |
PDF描述 |
|---|---|
| EN29LV160AT-70TI | Replaced by PTN78000W : |
| EN29LV160AT-70TIP | Replaced by PTN78000W : |
| EN29LV160AT-90BC | Replaced by PTN78000W : 12VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE |
| EN29LV160AT-90BCP | Replaced by PTN78000W : |
| EN29LV160AT-90BI | Replaced by PTN78000W : |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV160BB-70BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash 制造商:Eon Silicon Solution Inc 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash |
| EN29LV160BT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash |
| EN29LV160CB-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:FLASH, 3V Read Program Erase 16 Megabit (2M x 8 / 1M x 16) 70ns TSOP |
| EN29LV320AT-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV320A Series, 32 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash |
| EN29LV320B-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:32 Megabit, CMOS, 3V, Boot Sector Flash Memory, TSOP-48 |
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