參數(shù)資料
型號: EN29LV040A
廠商: Electronic Theatre Controls, Inc.
英文描述: 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
中文描述: 4兆位(為512k × 8位)統(tǒng)一部門,3.0伏的CMOS只閃存
文件頁數(shù): 9/35頁
文件大?。?/td> 257K
代理商: EN29LV040A
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2005/08/16
EN29LV040A
COMMAND DEFINITIONS
The operations of the EN29LV040A are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register. The sequences for the
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,
incorrect data values or improper sequences will reset the device to Read Mode.
Table 5. EN29LV040A Command Definitions
Bus Cycles
1
st
Cycle
Add
RA
Xxx
2
nd
Cycle
Add
3
rd
Cycle
4
th
Cycle
5
th
Cycle
Add
6
th
Cycle
Add
Command
Sequence
C
Data
RD
F0
Data
Add
Data
Add
Data
Data
Data
Read
Reset
1
1
Manufacturer ID
4
555
AA
2AA
55
555
90
100
1C
Device ID
4
555
AA
2AA
55
555
90
X01
4F
A
Sector Protect Verify
4
555
AA
2AA
55
555
90
(SA)
X02
00/
01
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program
Unlock Bypass Reset
2
2
XXX
XXX
A0
90
PA
XXX
PD
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend
Erase Resume
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A18-A16 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array
data using the standard read timings, with the only difference in that if it reads at an address within erase
suspended sectors, the device outputs status data. After completing a programming operation in the
Erase Suspend mode, the system may once again read array data with the same exception.
1
1
xxx
xxx
B0
30
相關(guān)PDF資料
PDF描述
EP300 EP300 PowerPC Bus Arbiter
EPA025A-70 High Efficiency Heterojunction Power FET
EPA040A-70 High Efficiency Heterojunction Power FET
EPA080A-70 High Efficiency Heterojunction Power FET
EPA090A High Efficiency Heterojunction Power FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29LV160AB-70TCP 制造商:EON-CFEON 功能描述:
EN29LV160AT-70TCP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160A Series, 16 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash
EN29LV160BB-70BIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash 制造商:Eon Silicon Solution Inc 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash
EN29LV160BT-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash
EN29LV160CB-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:FLASH, 3V Read Program Erase 16 Megabit (2M x 8 / 1M x 16) 70ns TSOP