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參數(shù)資料
| 型號： | EN29F010-55SCP |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1 Megabit (128K x 8-bit) 5V Flash Memory |
| 中文描述： | 1兆位（128K的× 8位）5V的快閃記憶體 |
| 文件頁數(shù)： | 8/35頁 |
| 文件大?。?/td> | 429K |
| 代理商： | EN29F010-55SCP |
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This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/10/20
EN29F010
Table 5. EN29F010 Command Definitions
1
st
Write Cycle
2
nd
Write Cycle
3
rd
Write Cycle
4
th
Write Cycle
5
th
Write Cycle
6
th
Write Cycle
Command
Sequence
Read/Reset
Write
Cycles
Req’d
Addr
RA
XXXh F0h
555h AAh
Data
RD
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
Reset
Read/Reset
AutoSelect
Manufacturer ID
AutoSelect Device ID
AutoSelect Sector
Protect Verify
Byte Program
Chip Erase
Sector Erase
Sector Erase Suspend
Sector Erase Resume
1
1
4
2AAh
55h
555h
F0h
RA
000h/
100h
01h
BA &
02h
PA
555h
555h
RD
7Fh/
1Ch
20h
00h/
01h
PD
AAh 2AAh 55h 555h
AAh 2AAh 55h
4
555h AAh
2AAh
55h
555h
90h
4
555h AAh
2AAh
55h
555h
90h
4
555h AAh
2AAh
55h
555h
90h
4
6
6
1
1
555h AAh
555h AAh
555h AAh
xxxh
xxxh
2AAh
2AAh
2AAh
55h
55h
55h
555h
555h
555h
A0h
80h
80h
10h
30h
BA
B0h
30h
Notes:
RA = Read Address: address of the memory location to be read.
This one is a read cycle.
RD = Read Data: data read from location RA during Read operation.
This one is a read cycle.
PA = Program Address: address of the memory location to be programmed
PD = Program Data: data to be programmed at location PA
BA = Sector Address: address of the Sector to be erased. Address bits A16-A14 uniquely select any Sector.
The data is 00h for an unprotected sector and 01h for a protected sector.
Byte Programming Command
Programming the EN29F010 is performed on a byte-by-byte basis using a four bus-cycle operation
(two unlock write cycles followed by the Program Setup command and Program Data Write cycle).
When the program command is executed, no additional CPU controls or timings are necessary. An
internal timer terminates the program operation automatically. Address is latched on the falling edge
of
CE
or
W E
, whichever is last; data is latched on the rising edge of
CE
or
W E
, whichever is first.
The program operation is completed when EN29F010 returns the equivalent data to the
programmed location.
Programming status may be checked by sampling data on DQ7 (
DATA
polling) or on DQ6 (toggle
bit). Changing data from 0 to 1 requires an erase operation. When programming time limit is
exceeded, DQ5 will produce a logical “1” and a Reset command can return the device to Read
mode.
Chip Erase Command
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
chip erase command, which in turn invokes the Embedded Erase algorithm. The device does
not
require
the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required
to provide any controls or timings during these operations. The Command Definitions table shows the
address and data requirements for the chip erase command sequence.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29F010-55SIP | 1 Megabit (128K x 8-bit) 5V Flash Memory |
| EN29F010-55TCP | 1 Megabit (128K x 8-bit) 5V Flash Memory |
| EN29F010-55TIP | 1 Megabit (128K x 8-bit) 5V Flash Memory |
| EN29F010-70JCP | Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOIC-Wide; No of Pins: 20; Container: Tape & Reel |
| EN29F010-70JIP | Octal Buffer/Line Driver with 3-STATE Outputs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29F010-55SIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory |
| EN29F010-55TCP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory |
| EN29F010-55TIP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory |
| EN29F010-70JCP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory |
| EN29F010-70JIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory |
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