參數(shù)資料
型號(hào): EN29F010-55SCP
廠商: Electronic Theatre Controls, Inc.
英文描述: 1 Megabit (128K x 8-bit) 5V Flash Memory
中文描述: 1兆位(128K的× 8位)5V的快閃記憶體
文件頁(yè)數(shù): 24/35頁(yè)
文件大?。?/td> 429K
代理商: EN29F010-55SCP
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/10/20
EN29F010
Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate
CE
Controlled Writes
Parameter
Symbols
Speed Options
JEDEC
Standard
Description
-45
-55
-70
-90
Unit
t
AVAV
t
WC
Write Cycle Time
Min
45
55
70
90
ns
t
AVEL
t
AS
Address Setup Time
Min
0
0
0
0
ns
t
ELAX
t
AH
Address Hold Time
Min
35
45
45
45
ns
t
DVEH
t
DS
Data Setup Time
Min
20
25
30
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
0
0
0
ns
t
OES
Output Enable Setup Time
Min
0
0
0
0
ns
Read
Toggle and
Data Polling
Min
0
0
0
0
ns
t
OEH
Output
Enable
Hold Time
Read Recovery Time before
Write (
OE
High to
CE
Low)
Min
10
10
10
10
ns
t
GHEL
t
GHEL
Min
0
0
0
0
ns
t
WLEL
t
WS
W E
SetupTime
Min
0
0
0
0
ns
t
EHWH
t
ELEH
t
EHEL
t
WH
t
CP
t
CPH
W E
Hold Time
Min
0
0
0
0
ns
Write Pulse Width
Min
25
30
35
45
ns
Write Pulse Width High
Min
20
20
20
20
ns
Typ
7
7
7
7
μs
t
WHWH
1
t
WHWH1
Programming Operation
Max
200
200
200
200
μs
Typ
0.3
0.3
0.3
0.3
s
t
WHWH
2
t
WHWH2
Sector Erase Operation
Max
5
5
5
5
s
Typ
3
3
3
3
s
t
WHWH
3
t
WHWH3
Chip Erase Operation
Max
35
35
35
35
s
t
VCS
Vcc Setup Time
Min
50
50
50
50
μs
t
VIDR
Rise Time to V
ID
Min
500
500
500
500
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29F010-55SIP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-55TCP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-55TIP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-70JCP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-70JIP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory