參數(shù)資料
型號(hào)： EN29F010-55SCP
廠商： Electronic Theatre Controls, Inc.
英文描述： 1 Megabit (128K x 8-bit) 5V Flash Memory
中文描述： 1兆位（128K的× 8位）5V的快閃記憶體
文件頁(yè)數(shù)： 11/35頁(yè)
文件大?。?/td> 429K
代理商： EN29F010-55SCP
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/10/20
EN29F010
WRITE OPERATION STATUS
DQ7
DATA
Polling
The EN29F010 provides
DATA
Polling on DQ7 to indicate to the host system the status of the
embedded operations. The
DATA
Polling feature is active during the Byte Programming, Sector
Erase, Chip Erase, and Erase Suspend. (See Table 6)
When the Byte Programming is in progress, an attempt to read the device will produce the
complement of the data last written to DQ7. Upon the completion of the Byte Programming, an
attempt to read the device will produce the true data last written to DQ7. For the Byte Programming,
DATA
polling is valid after the rising edge of the fourth
WE
or
CE
pulse in the four-cycle sequence.
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the
DQ7 output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7
output during the read. For Chip Erase, the
DATA
polling is valid after the rising edge of the sixth
W E
or
CE
pulse in the six-cycle sequence. For Sector Erase,
DATA
polling is valid after the last
rising edge of the sector erase
WE
or
CE
pulse.
DATA
Polling must be performed at any address within a sector that is being programmed or
erased and not a protected sector. Otherwise,
DATA
polling may give an inaccurate result if the
address used is in a protected sector.
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when
the output enable (
OE
) is low. This means that the device is driving status information on DQ7 at
one instant of time and valid data at the next instant of time. Depending on when the system
samples the DQ7 output, it may read the status of valid data. Even if the device has completed the
embedded operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid.
The valid data on DQ0-DQ7 will be read on the subsequent read attempts.
The flowchart for
DATA
Polling (DQ7) is shown on Flowchart 5. The
DATA
Polling (DQ7) timing
diagram is shown in Figure 8.
DQ6
Toggle Bit I
The EN29F010 provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the
embedded programming and erase operations. (See Table 6)
During an embedded Program or Erase operation, successive attempts to read data from the device
at any address (by toggling
OE
or
CE
) will result in DQ6 toggling between “zero” and “one”. Once
the embedded Program or Erase operation is complete, DQ6 will stop toggling and valid data will be
read on the next successive attempts. During Byte Programming, the Toggle Bit is valid after the
rising edge of the fourth
WE
pulse in the four-cycle sequence. For Chip Erase, the Toggle Bit is
valid after the rising edge of the sixth-cycle sequence. For Sector Erase, the Toggle Bit is valid after
the last rising edge of the Sector Erase
W E
pulse. The Toggle Bit is also active during the sector
erase time-out window.
相關(guān)PDF資料
PDF描述
EN29F010-55SIP 1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-55TCP 1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-55TIP 1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-70JCP Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOIC-Wide; No of Pins: 20; Container: Tape & Reel
EN29F010-70JIP Octal Buffer/Line Driver with 3-STATE Outputs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29F010-55SIP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-55TCP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-55TIP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-70JCP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010-70JIP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Megabit (128K x 8-bit) 5V Flash Memory
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