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參數(shù)資料
| 型號(hào)： | EM614163A-35 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256K x 16 High Speed EDO DRAM |
| 中文描述： | 256K × 16高速EDO公司的DRAM |
| 文件頁數(shù)： | 3/23頁 |
| 文件大?。?/td> | 145K |
| 代理商： | EM614163A-35 |
EtronTech
Em614163A-30/35/40/45
Preliminary
3
April 1997
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
SS
Supply voltage relative to V
SS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
V
T
V
CC
I
OUT
P
T
T
OPT
T
STG
- 0.5 to +7.0
- 0.5 to +7.0
50
1.0
0 to +70
- 55 to +125
V
V
mA
W
°
C
°
C
Capacitance
(Ta = 25
°
C; V
CC
= 5V
ó
10%; f = 1MHz)
Parameter
Symbol Typ. Max. Unit
Note
Input capacitance (A0 - A8)
Input capacitance (RAS,UCAS,LCAS,WE,OE )
C
I
1
D
5
pF
1
C
I
2
D
5
pF
1
Output capacitance(I/O0 - I/O15)
Notes:
1. Capacitance is sampled and not 100% tested.
C
I/O
D
7
pF
1
Truth Table
Addresses
t
R
Function
RAS
LCAS
UCAS
WE
OE
t
C
DQs
Notes
Standby
Read: Word
H
L
H
→
X
L
H
→
X
L
X
H
X
L
X
X
High-Z
Data-out
Lower byte, data-out
Upper byte, high-Z
Lower byte, high-Z
Upper byte, data-out
ROW
COL
Read: Lower Byte
L
L
H
H
L
ROW
COL
Read: Upper Byte
L
H
L
H
L
ROW
COL
Write: Word
(Early Write)
Write: Lower Byte
(Early)
Write: Upper Byte
(Early)
Read Write
EDO-Page-
Mode Read
EDO-Page-
Mode Write
EDO-
Page-Mode
Read-Write
Hidden
Refresh
RAS# only refresh
CBR Refresh
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).
3. EARLY WRITE only.
L
L
L
L
X
ROW
COL
Data-in
L
L
H
L
X
ROW
COL
Lower byte, data-in
Upper byte, high-Z
Lower byte, high-Z
Upper byte, data-in
Data-out, Data-in
Data-out
Data-out
Data-in
Data-in
Data-out, Data-in
L
H
L
L
X
ROW
COL
L
L
L
L
L
L
L
L
H
→
L
H
H
L
L
H
→
L
L
→
H
L
L
X
X
L
→
H
ROW
ROW
n/a
ROW
n/a
ROW
COL
COL
COL
COL
COL
COL
1, 2
2
2
1
1
1, 2
1st Cycle
2nd Cycle
1st Cycle
2nd Cycle
1st Cycle
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
2nd Cycle
L
H
→
L
H
→
L
H
→
L
L
→
H
n/a
COL
Data-out Data-in
1 2
Read
Write
L
→
H
→
L
L
→
H
→
L
L
H
→
L
L
L
H
L
L
L
H
L
H
L
X
X
L
X
X
X
ROW
ROW
ROW
X
COL
COL
n/a
X
Data-out
Data-in
High-Z
High-Z
2
1, 3
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EM614163A-40 | 256K x 16 High Speed EDO DRAM |
| EM614163A-45 | 256K x 16 High Speed EDO DRAM |
| EM614163TS-30 | 256K x 16 High Speed EDO DRAM |
| EM614163TS-35 | 256K x 16 High Speed EDO DRAM |
| EM614163TS-40 | 256K x 16 High Speed EDO DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| EM614163A-50 | 制造商:ETRON 功能描述: |
| EM620F32-45LF | 制造商:EMLSI 制造商全稱:Emerging Memory & Logic Solutions Inc 功能描述:256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| EM620F32-45LL | 制造商:EMLSI 制造商全稱:Emerging Memory & Logic Solutions Inc 功能描述:256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| EM620F32-85LF | 制造商:EMLSI 制造商全稱:Emerging Memory & Logic Solutions Inc 功能描述:256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| EM620F32-85LL | 制造商:EMLSI 制造商全稱:Emerging Memory & Logic Solutions Inc 功能描述:256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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