參數(shù)資料
型號： EM614163A-35
廠商： Electronic Theatre Controls, Inc.
英文描述： 256K x 16 High Speed EDO DRAM
中文描述： 256K × 16高速EDO公司的DRAM
文件頁數(shù)： 1/23頁
文件大?。?/td> 145K
代理商： EM614163A-35
EtronTech
Em614163A-30/35/40/45
Etron Technology, Inc.
1F, No. 1, Prosperity Rd. 1, Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5779001
Etron Technology, Inc. reserves the right to make changes to its products and specifications April 1997
without notice.
256K x 16 High Speed EDO DRAM
Preliminary
Features
Fast Access Time: 30/35/40/45ns
Fast EDO Page Cycle Time: 13.3/15/16/18ns
EDO Page Mode Operation
Single +5V
ó
10% Power Supply
Low Power Dissipation
Individual Byte Control via Dual CAS Inputs
Three Refresh Modes
512-Cycle Refresh in 8ms(9 rows and 9 columns)
TTL Compatible
40-Pin, 400-mil Plastic SOJ Package, or
40/44-Pin, 400-mil Plastic TSOP-II Package.
Ordering Information
Part Number
Em614163A-30
EM614163TS-30
Em614163A-35
EM614163TS-35
Em614163A-40
EM614163TS-40
Em614163A-45
EM614163TS-45
Key Specifications
Speed
30ns
30ns
35ns
35ns
40ns
40ns
45ns
45ns
Package
SOJ
TSOP-II
SOJ
TSOP-II
SOJ
TSOP-II
SOJ
TSOP-II
Speed
-30
-35
-40
-45
t
RAC
30ns
35ns
40ns
45ns
t
CAC
9ns
10ns
11ns
12ns
t
AA
16ns
18ns
20ns
22ns
t
OEA
9ns
9ns
10ns
10ns
t
RC
53ns
60ns
66ns
75ns
t
PC
13.3ns
15ns
16ns
18ns
Overview
The Em614163A-30/35/40/45 is a high speed
EDO(Extended Data Output) DRAM organized in
262,144 words by 16 bits. It supports EDO Page
Mode and 16-bit data width for high data bandwidth
applications. The
EDO
accelerated access that provides a shorter page
cycle and a faster data access time than the
traditional Fast Page Mode.
Pin Assignment (Top View)
40-Pin SOJ
40/44-Pin TSOP-II
Vcc
I/O0
I/O1
I/O2
I/O3
Vcc
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
Vss
I/O15
I/O14
I/O13
I/O12
Vss
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
Vcc
I/O0
I/O1
I/O2
I/O3
Vcc
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
Vss
I/O15
I/O14
I/O13
I/O12
Vss
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
Vss
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
32
31
30
29
28
27
26
25
24
23
Pin Names
A0 - A8
RAS
Address Inputs
Row Address Strobe
UCAS
Column Address Strobe
(Upper Byte Control)
Column Address Strobe
(Lower Byte Control)
Write Enable
LCAS
WE
OE
Output Enable
I/O0 - I/O15
V
CC
V
SS
NC
Data Input/Output
+5V Power Supply
Ground
No Connection
Page Mode
is
an
Compared with Fast Page Mode DRAM, the
EDO DRAM data output will be held valid after
CAS
goes HIGH, as long as
RAS
and
OE
are held LOW
and
WE
is held HIGH. This feature allows
CAS
precharge time to occur without the output data
going invalid. Therefore, the EDO
CAS
timing can be
condensed to carry more data out in a given period.
The Em614163A-30/35/40/45 fully utilizes the
EDO Page Mode advantages. It allows 512 random
access within a page with a fast cycle time as short
as 13.3/15/16/18 ns.
The Em614163A-30/35/40/45 is ideally suitable
for high performance graphics frame buffers, CD-
ROMs, disk drivers, set top boxes, and DSP
applications.
相關(guān)PDF資料
PDF描述
EM614163A-40 256K x 16 High Speed EDO DRAM
EM614163A-45 256K x 16 High Speed EDO DRAM
EM614163TS-30 256K x 16 High Speed EDO DRAM
EM614163TS-35 256K x 16 High Speed EDO DRAM
EM614163TS-40 256K x 16 High Speed EDO DRAM
相關(guān)代理商/技術(shù)參數(shù)
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EM620F32-85LL 制造商:EMLSI 制造商全稱:Emerging Memory & Logic Solutions Inc 功能描述:256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
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