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參數資料
| 型號： | EDS6416AHBH |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 64M bits SDRAM (4M words x 16 bits) |
| 中文描述： | 6400位的SDRAM（4分字× 16位） |
| 文件頁數： | 5/49頁 |
| 文件大?。?/td> | 716K |
| 代理商： | EDS6416AHBH |
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EDS6416AHBH, EDS6416CHBH
DC Characteristics 1 (TA = 0
°
C to +70
°
C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V) [EDS6416AH]
(TA = 0
°
C to +70
°
C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) [EDS6416CH]
EDS6416AH
Data Sheet E0442E40 (Ver. 4.0)
5
EDS6416CH
Parameter
Symbol
Grade
-6B
-75
max.
120
100
max.
—
100
Unit
Test condition
Burst length = 1
tRC = tRC (min.)
CKE = VIL,
tCK = tCK (min.)
Notes
Operating current
IDD1
mA
1, 2, 3
Standby current in power
down
Standby current in power
down (input signal stable)
Standby current in non power
down
Standby current in non power
down (input signal stable)
Active standby current in
power down
Active standby current in
power down (input signal
stable)
Active standby current in non
power down
Active standby current in non
power down (input signal
stable)
IDD2P
3
3
mA
6
IDD2PS
2
2
mA
CKE = VIL, tCK =
∞
7
IDD2N
20
20
mA
CKE, /CS = VIH,
tCK = tCK (min.)
CKE = VIH, tCK =
∞
,
/CS = VIH
CKE = VIL,
tCK = tCK (min.)
4
IDD2NS
9
9
mA
8
IDD3P
4
4
mA
1, 2, 6
IDD3PS
3
3
mA
CKE = VIL, tCK =
∞
2, 7
IDD3N
35
35
mA
CKE, /CS = VIH,
tCK = tCK (min.)
1, 2, 4
IDD3NS
20
20
mA
CKE = VIH, tCK =
∞
,
/CS = VIH
2, 8
Burst operating current
IDD4
-6B
-75
-6B
-75
140
120
260
220
—
120
—
220
mA
tCK = tCK (min.),
BL = 4
1, 2, 5
Refresh current
IDD5
mA
tRC = tRC (min.)
3
Self refresh current
IDD6
1.5
1.5
mA
VIH
≥
VDD – 0.2V
VIL
≤
0.2V
Notes: 1. IDD depends on output load condition when the device is selected. IDD (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CLK operating current.
7. After power down mode, no CLK operating current.
8. Input signals are VIH or VIL fixed.
相關PDF資料 |
PDF描述 |
|---|---|
| EDS6416AHBH-6B-E | Circular Connector; No. of Contacts:39; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:21-39 RoHS Compliant: No |
| EDS6416AHBH-75-E | 64M bits SDRAM (4M words x 16 bits) |
| EDS6432AFTA-75TI-E | 64M bits SDRAM WTR (Wide Temperature Range) |
| EDX5116ABSE-3B-E | 512M bits XDR DRAM (32M words ?16 bits) |
| EDX5116ABSE-2A-E | 512M bits XDR DRAM (32M words ?16 bits) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| EDS6416AHBH-6B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
| EDS6416AHBH-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
| EDS6416AHBH-75TT-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM WTR (Wide Temperature Range) |
| EDS6416AHBH-TT | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM WTR (Wide Temperature Range) |
| EDS6416AHTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
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