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參數(shù)資料
| 型號： | EDS6416AHBH |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 64M bits SDRAM (4M words x 16 bits) |
| 中文描述： | 6400位的SDRAM（4分字× 16位） |
| 文件頁數(shù)： | 16/49頁 |
| 文件大?。?/td> | 716K |
| 代理商： | EDS6416AHBH |
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EDS6416AHBH, EDS6416CHBH
Data Sheet E0442E40 (Ver. 4.0)
16
Current state
Read with auto-
precharge
/CS
/RAS
/CAS
/WE
Address
Command
Operation
Continue burst to end and
precharge
Continue burst to end and
precharge
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
3
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
2
ILLEGAL*
3
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
Write
H
×
×
×
×
DESL
Continue burst to end
L
H
H
H
×
NOP
Continue burst to end
L
H
H
L
×
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Term burst and New read
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst and New write
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
3
Term burst write and Precharge*
1
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
Write with auto-
precharge
H
×
×
×
×
DESL
Continue burst to end and
precharge
Continue burst to end and
precharge
L
H
H
H
×
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
3
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
3
ILLEGAL*
3
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
Refresh (auto-refresh)
H
×
×
×
×
DESL
Enter IDLE after tRC
L
H
H
H
×
NOP
Enter IDLE after tRC
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
4
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
4
L
L
H
H
BA, RA
ACT
ILLEGAL*
4
L
L
H
L
BA, A10
PRE, PALL
ILLEGAL*
4
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDS6416AHBH-6B-E | Circular Connector; No. of Contacts:39; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:21-39 RoHS Compliant: No |
| EDS6416AHBH-75-E | 64M bits SDRAM (4M words x 16 bits) |
| EDS6432AFTA-75TI-E | 64M bits SDRAM WTR (Wide Temperature Range) |
| EDX5116ABSE-3B-E | 512M bits XDR DRAM (32M words ?16 bits) |
| EDX5116ABSE-2A-E | 512M bits XDR DRAM (32M words ?16 bits) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS6416AHBH-6B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
| EDS6416AHBH-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
| EDS6416AHBH-75TT-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM WTR (Wide Temperature Range) |
| EDS6416AHBH-TT | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM WTR (Wide Temperature Range) |
| EDS6416AHTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
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