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參數(shù)資料
| 型號(hào)： | EDS2516APTA-TI-E |
| 廠(chǎng)商： | Elpida Memory, Inc. |
| 英文描述： | 256M bits SDRAM WTR (Wide Temperature Range) |
| 中文描述： | 256M比特內(nèi)存水樹(shù)（寬溫度范圍） |
| 文件頁(yè)數(shù)： | 16/50頁(yè) |
| 文件大小： | 703K |
| 代理商： | EDS2516APTA-TI-E |
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EDS2516CDTA
Function Truth Table
The following table shows the operations that are performed when each command is issued in each mode of the
SDRAM.
The following table assumes that CKE is high.
Prelimimary Data Sheet E0545E40 (Ver. 4.0)
16
Current state
/CS
/RAS
/CAS
/WE
Address
Command
Operation
Precharge
H
×
×
×
×
DESL
Enter IDLE after tRP
L
H
H
H
×
NOP
Enter IDLE after tRP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
3
L
L
H
H
BA, RA
ACT
ILLEGAL*
3
L
L
H
L
BA, A10
PRE, PALL
NOP*
5
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
Idle
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
4
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
4
L
L
H
H
BA, RA
ACT
Bank and row active
L
L
H
L
BA, A10
PRE, PALL
NOP
L
L
L
H
×
REF, SELF
Refresh
L
L
L
L
MODE
MRS
Mode register set*
8
Row active
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
Begin read*
6
L
H
L
L
BA, CA, A10
WRIT/WRITA
Begin write*
6
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
2
Precharge*
7
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
Read
H
×
×
×
×
DESL
Continue burst to end
L
H
H
H
×
NOP
Continue burst to end
L
H
H
L
×
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Continue burst read to /CAS
latency and New read
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst read/start write
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
2
L
L
H
L
BA, A10
PRE, PALL
Term burst read and Precharge
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDS2516ACTA | 256M bits SDRAM |
| EDS2516ACTA-75 | 256M bits SDRAM |
| EDS2516ACTA-7A | 256M bits SDRAM |
| EDS2516ADTA-75 | 256M bits SDRAM (16M words x 16 bits) |
| EDS2516ADTA-75-E | 256M bits SDRAM (16M words x 16 bits) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS2516CDTA | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits SDRAM (16M words x 16 bits) |
| EDS2516CDTA-75-E | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits SDRAM (16M words x 16 bits) |
| EDS2516EEBH-9ATT-E | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range) |
| EDS2516EEBH-TT | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range) |
| EDS2516JEBH-75R3 | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits AS SDRAM |
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