參數(shù)資料
型號(hào): EDE5108GBSA
廠商: Elpida Memory, Inc.
英文描述: 512M bits DDR-II SDRAM
中文描述: 512M比特的DDR - II內(nèi)存
文件頁數(shù): 22/66頁
文件大?。?/td> 697K
代理商: EDE5108GBSA
EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
22
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Note
Precharging
H
×
×
×
×
DESL
Nop -> Enter idle after tRP
L
H
H
H
×
NOP
Nop -> Enter idle after tRP
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
Nop -> Enter idle after tRP
L
L
H
L
A10 (AP)
PALL
Nop -> Enter idle after tRP
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Row activating
H
×
×
×
×
DESL
Nop -> Enter bank active after tRCD
L
H
H
H
×
NOP
Nop -> Enter bank active after tRCD
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Write recovering
H
×
×
×
×
DESL
Nop -> Enter bank active after tWR
L
H
H
H
×
NOP
Nop -> Enter bank active after tWR
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
New write
L
H
L
L
BA, CA, A10 (AP)
WRITA
New write
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
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