參數(shù)資料
型號： EDE5108AESK
廠商： Elpida Memory, Inc.
英文描述： 512M bits DDR2 SDRAM
中文描述： 512M比特DDR2 SDRAM內(nèi)存
文件頁數(shù)： 10/66頁
文件大?。?/td> 697K
代理商： EDE5108AESK
EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
10
ODT DC Electrical Characteristics (TC = 0 to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
Parameter
Symbol
min.
typ.
max.
Unit
Note
Rtt effective impedance value for EMRS (A6, A2)
=
0, 1
;
75
Rtt1(eff)
60
75
90
1
Rtt effective impedance value for EMRS (A6, A2)
=
1, 0
;
150
Rtt2(eff)
120
150
180
1
Deviation of VM with respect to VDDQ/2
VM
3.75
+
3.75
%
1
Note: 1. Test condition for Rtt measurements.
Measurement Definition for Rtt(eff)
Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively.
VIH(AC), and VDDQ values defined in SSTL
_
18.
VIH(AC)
VIL(AC)
I(VIH(AC))
I(VIL(AC))
Rtt(eff) =
Measurement Definition for
VM
Measure voltage (VM) at test pin (midpoint) with no load.
2
×
VM
VDDQ
VM =
×
100%
1
OCD Default Characteristics (TC = 0 to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
Parameter
min.
typ.
max.
Unit
Notes
Output impedance
12.6
18
23.4
1
Pull-up and pull-down mismatch
0
4
1, 2
Output slew rate
1.5
4.5
V/ns
3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT
VDDQ)/IOH must be less than 23.4
for values of VOUT between VDDQ and VDDQ
280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/IOL must be less than 23.4
for values of VOUT between 0V and 280mV.
2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and
voltage.
3. Slew rate measured from VIL(AC) to VIH(AC).
4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate
as measured from AC to AC. This is guaranteed by design and characterization.
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EDE5108GBSA 512M bits DDR-II SDRAM
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相關代理商/技術參數(shù)
參數(shù)描述
EDE5108AESK-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AESK-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AESK-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AGBG 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AGBG-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
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