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參數(shù)資料
| 型號： | EDE5108AESK-5C-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512M bits DDR2 SDRAM |
| 中文描述： | 64M X 8 DDR DRAM, 0.5 ns, PBGA60 |
| 封裝： | ROHS COMPLIANT, FBGA-60 |
| 文件頁數(shù)： | 44/66頁 |
| 文件大?。?/td> | 697K |
| 代理商： | EDE5108AESK-5C-E |
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EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
44
Posted
WRIT
NOP
CK
/CK
T0
T1
T2
T3
T4
T5
T6
T7
T9
Command
DQS, /DQS
DQ
WL = RL
1 = 4
>
tWR
=
in0
in1
in2
in3
PRE
=
<
tDQSS
Completion of
the Burst Write
Burst Write Operation (RL = 5, WL = 4, BL = 4 tWR = 3 (AL=2, CL=3))
NOP
CK
/CK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
Command
DQS, /DQS
DQ
CL = 3
RL = 5
AL = 2
>
tWTR
=
in0
in2
NOP
in1
in3
Posted
READ
WL = RL –1 = 4
Write to Read = CL - 1 + BL/2 + tWTR (2) = 6
out0
out1
Burst Write Followed by Burst Read (RL = 5, BL = 4, WL = 4, tWTR = 2 (AL=2, CL=3))
The minimum number of clock from the burst write command to the burst read command is CL - 1 + BL/2 + a write
to-read-turn-around-time (tWTR). This tWTR is not a write recovery time (tWR) but the time required to transfer the
4bit write data from the input buffer into sense amplifiers in the array.
NOP
/CK
CK
T0
T1
T2
T3
T4
T5
T6
T7
T8
Command
DQS, /DQS
DQ
in
A0
in
A2
NOP
in
A1
in
A3
in
B0
in
B2
in
B1
in
B3
Posted
WRIT
Posted
WRIT
WL = RL
1 = 4
A
B
Seamless Burst Write Operation (RL = 5, WL = 4, BL = 4)
Enabling a write command every other clock supports the seamless burst write operation. This operation is allowed
regardless of same or different banks as long as the banks are activated.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE5108AESK-6E-E | 512M bits DDR2 SDRAM |
| EDE5108GBSA-4A-E | 512M bits DDR-II SDRAM |
| EDE5104GBSA-5A-E | RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80% |
| EDE5108GBSA-5A-E | INNOLINE: Rxx-100_150A - Compact High Voltage Power Supplies - 5 Watt in Low Profile DIP24 Package - 3000VDC Isolation - Remote Voltage Programming by External Voltage or Resistance - Continuous Short Circuit Protection - Cascadeable to generate Output Voltages of up to 420VDC |
| EDE5104GBSA | 512M bits DDR-II SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE5108AESK-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGBG | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGBG-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGBG-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGSE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
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