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參數(shù)資料
| 型號(hào)： | EDE5108AESK-5C-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512M bits DDR2 SDRAM |
| 中文描述： | 64M X 8 DDR DRAM, 0.5 ns, PBGA60 |
| 封裝： | ROHS COMPLIANT, FBGA-60 |
| 文件頁數(shù)： | 10/66頁 |
| 文件大?。?/td> | 697K |
| 代理商： | EDE5108AESK-5C-E |
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EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
10
ODT DC Electrical Characteristics (TC = 0 to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
Parameter
Symbol
min.
typ.
max.
Unit
Note
Rtt effective impedance value for EMRS (A6, A2)
=
0, 1
;
75
Rtt1(eff)
60
75
90
1
Rtt effective impedance value for EMRS (A6, A2)
=
1, 0
;
150
Rtt2(eff)
120
150
180
1
Deviation of VM with respect to VDDQ/2
VM
3.75
+
3.75
%
1
Note: 1. Test condition for Rtt measurements.
Measurement Definition for Rtt(eff)
Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively.
VIH(AC), and VDDQ values defined in SSTL
_
18.
VIH(AC)
VIL(AC)
I(VIH(AC))
I(VIL(AC))
Rtt(eff) =
Measurement Definition for
VM
Measure voltage (VM) at test pin (midpoint) with no load.
2
×
VM
VDDQ
VM =
×
100%
1
OCD Default Characteristics (TC = 0 to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
Parameter
min.
typ.
max.
Unit
Notes
Output impedance
12.6
18
23.4
1
Pull-up and pull-down mismatch
0
4
1, 2
Output slew rate
1.5
4.5
V/ns
3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT
VDDQ)/IOH must be less than 23.4
for values of VOUT between VDDQ and VDDQ
280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/IOL must be less than 23.4
for values of VOUT between 0V and 280mV.
2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and
voltage.
3. Slew rate measured from VIL(AC) to VIH(AC).
4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate
as measured from AC to AC. This is guaranteed by design and characterization.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE5108AESK-6E-E | 512M bits DDR2 SDRAM |
| EDE5108GBSA-4A-E | 512M bits DDR-II SDRAM |
| EDE5104GBSA-5A-E | RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80% |
| EDE5108GBSA-5A-E | INNOLINE: Rxx-100_150A - Compact High Voltage Power Supplies - 5 Watt in Low Profile DIP24 Package - 3000VDC Isolation - Remote Voltage Programming by External Voltage or Resistance - Continuous Short Circuit Protection - Cascadeable to generate Output Voltages of up to 420VDC |
| EDE5104GBSA | 512M bits DDR-II SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE5108AESK-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGBG | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGBG-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGBG-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGSE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
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