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參數(shù)資料
| 型號： | EDE5108AESK-4A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512M bits DDR2 SDRAM |
| 中文描述： | 64M X 8 DDR DRAM, 0.6 ns, PBGA60 |
| 封裝： | ROHS COMPLIANT, FBGA-60 |
| 文件頁數(shù)： | 43/66頁 |
| 文件大?。?/td> | 697K |
| 代理商： | EDE5108AESK-4A-E |
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EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
43
Burst Write Command [WRIT]
The Burst Write command is initiated by having /CS, /CAS and /WE low while holding /RAS high at the rising edge of
the clock. The address inputs determine the starting column address. Write latency (WL) is defined by a read
latency (RL) minus one and is equal to (AL + CL
1). A data strobe signal (DQS) should be driven low (preamble)
one clock prior to the WL. The first data bit of the burst cycle must be applied to the DQ pins at the first rising edge
of the DQS following the preamble. The tDQSS specification must be satisfied for write cycles. The subsequent
burst bit data are issued on successive edges of the DQS until the burst length of 4 is completed. When the burst
has finished, any additional data supplied to the DQ pins will be ignored. The DQ Signal is ignored after the burst
write operation is complete. The time from the completion of the burst write to bank precharge is the write recovery
time (tWR).
WRIT
NOP
CK
/CK
T0
T1
T2
T3
T4
T5
T6
T7
T9
Command
DQS, /DQS
DQ
>
tRP
=
>
tWR
=
in2
PRE
NOP
ACT
in1
in3
in0
=
Completion of
the Burst Write
<
tDQSS
WL = RL –1 = 2
Burst Write Operation (RL = 3, WL = 2, BL = 4 tWR = 2 (AL=0, CL=3))
WRIT
NOP
CK
/CK
T0
T1
T2
T3
T4
T5
T6
T7
T8
Command
DQS, /DQS
DQ
>
tRP
=
>
tWR
=
in2
in1
in3
in0
in6
in5
in7
in4
=
Completion of
the Burst Write
<
tDQSS
WL = RL –1 = 2
T9
T11
NOP
ACT
PRE
Burst Write Operation (RL = 3, WL = 2, BL = 8 (AL=0, CL=3))
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| EDE5104GBSA-5A-E | RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80% |
| EDE5108GBSA-5A-E | INNOLINE: Rxx-100_150A - Compact High Voltage Power Supplies - 5 Watt in Low Profile DIP24 Package - 3000VDC Isolation - Remote Voltage Programming by External Voltage or Resistance - Continuous Short Circuit Protection - Cascadeable to generate Output Voltages of up to 420VDC |
相關代理商/技術參數(shù) |
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| EDE5108AESK-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
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| EDE5108AGBG-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
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