- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384280 > EDE5108AESK-4A-E (ELPIDA MEMORY INC) 512M bits DDR2 SDRAM PDF資料下載
參數(shù)資料
| 型號： | EDE5108AESK-4A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512M bits DDR2 SDRAM |
| 中文描述： | 64M X 8 DDR DRAM, 0.6 ns, PBGA60 |
| 封裝： | ROHS COMPLIANT, FBGA-60 |
| 文件頁數(shù)： | 42/66頁 |
| 文件大?。?/td> | 697K |
| 代理商： | EDE5108AESK-4A-E |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁當(dāng)前第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁
EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
42
Enabling a read command at every other clock supports the seamless burst read operation. This operation is
allowed regardless of same or different banks as long as the banks are activated.
READ
NOP
READ
CK
/CK
T0
T2
T4
T6
T8
T10
T1
T3
T5
T7
T9
T11
Command
DQS, /DQS
DQ
NOP
RL = 4
Burst interrupt is only
allowed at this timing.
A0
A1
A2
A3
out
B1
B2
B3
B4
B5
B6
B7
A
B
Burst Read Interrupt by Read
Notes :1. Read burst interrupt function is only allowed on burst of 8. burst interrupt of 4 is prohibited.
2. Read burst of 8 can only be interrupted by another read command. Read burst interruption by write
command or precharge command is prohibited.
3. Read burst interrupt must occur exactly two clocks after previous read command. any other read burst
interrupt timings are prohibited.
4. Read burst interruption is allowed to any bank inside DRAM.
5. Read burst with auto precharge enabled is not allowed to interrupt.
6. Read burst interruption is allowed by another read with auto precharge command.
7. All command timings are referenced to burst length set in the mode register. They are not referenced to
actual burst. For example, minimum read to precharge timing is AL + BL/2 where BL is the burst length
set in the mode register and not the actual burst (which is shorter because of interrupt).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE5108AESK-5C-E | 512M bits DDR2 SDRAM |
| EDE5108AESK-6E-E | 512M bits DDR2 SDRAM |
| EDE5108GBSA-4A-E | 512M bits DDR-II SDRAM |
| EDE5104GBSA-5A-E | RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80% |
| EDE5108GBSA-5A-E | INNOLINE: Rxx-100_150A - Compact High Voltage Power Supplies - 5 Watt in Low Profile DIP24 Package - 3000VDC Isolation - Remote Voltage Programming by External Voltage or Resistance - Continuous Short Circuit Protection - Cascadeable to generate Output Voltages of up to 420VDC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE5108AESK-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AESK-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGBG | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGBG-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108AGBG-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。