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參數(shù)資料
| 型號(hào)： | EDE5108ABSE-4A-E |
| 廠(chǎng)商： | ELPIDA MEMORY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 512M bits DDR2 SDRAM |
| 中文描述： | 64M X 8 DDR DRAM, 0.6 ns, PBGA64 |
| 封裝： | ROHS COMPLIANT, FBGA-64 |
| 文件頁(yè)數(shù)： | 22/66頁(yè) |
| 文件大?。?/td> | 697K |
| 代理商： | EDE5108ABSE-4A-E |
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EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
22
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Note
Precharging
H
×
×
×
×
DESL
Nop -> Enter idle after tRP
L
H
H
H
×
NOP
Nop -> Enter idle after tRP
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
Nop -> Enter idle after tRP
L
L
H
L
A10 (AP)
PALL
Nop -> Enter idle after tRP
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Row activating
H
×
×
×
×
DESL
Nop -> Enter bank active after tRCD
L
H
H
H
×
NOP
Nop -> Enter bank active after tRCD
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Write recovering
H
×
×
×
×
DESL
Nop -> Enter bank active after tWR
L
H
H
H
×
NOP
Nop -> Enter bank active after tWR
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
New write
L
H
L
L
BA, CA, A10 (AP)
WRITA
New write
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE5104ABSE-5C-E | 512M bits DDR2 SDRAM |
| EDE5108ABSE-5C-E | 512M bits DDR2 SDRAM |
| EDE5108AESK-4A-E | 512M bits DDR2 SDRAM |
| EDE5108AESK-5C-E | 512M bits DDR2 SDRAM |
| EDE5108AESK-6E-E | 512M bits DDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE5108ABSE-5C-E | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108ABSE-AE | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR2 SDRAM for HYPER DIMM |
| EDE5108ABSE-AE-E | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR2 SDRAM for HYPER DIMM |
| EDE5108ABSE-BE | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR2 SDRAM for HYPER DIMM |
| EDE5108ABSE-BE-E | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR2 SDRAM for HYPER DIMM |
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