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| 型號： | ECM806 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 178K |
| 代理商： | ECM806 |
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
13
ECM806
6 x 6 mm Dual Mode Cellular TDMA/AMPS
3.5V POWER AMPLIFIER MODULE
PRELIMINARY DATA SHEET
SS-000489-000
Revision J
If a lower gain PAM is used, the driver needs to provide more power, at the expense of
more operation current and possible degradation in ACPR.
Therefore the ECM806 can replace a lower gain PAM, this allows the driver to
work at a lower output power and provide better ACPR, this improved performance
offers more design margin in the transmitter chain.
IV. Easy Shut Down and Low Leakage Current
The Vcc pin of the PAM is connected directly to the battery, therefore a shut down
FET is not required. A voltage is applied to the Vref pin, which then brings up the
quiescent current.
Removing the voltage applied to Vref pin, the quiescent current will drop to a small
leakage current, typically <10uA. The low leakage current of the PAM allows for a
longer standby time for the phone.
V. General Application
The PAM requires a minimal number of external components. Both the input and
output are dc-blocked within the PAM as shown in the function diagram. The input pin is
connected to ground through a shunt inductor within the PAM.
ECM806 is designed with a low quiescent current of 120mA typical. At full TDMA
power of 30dBm, the operation current will be greater than 600mA. Therefore it is a
“quasi class B” or “deep class AB” amplifier. The operation current increases with output
power.
TDMA signal has a time varying amplitude. The peak power is 2dB above the
average RF power (it can be more accurately defined by PDF, power density function).
As the peak power is clipped by the amplifier saturation power level, the distortion of the
signal will cause the ACPR to deteriorate rapidly. Therefore the P1dB (as tested by a
SINE wave) of the amplifier should be over 31dBm to provide good ACPR at 30 dBm of
output power.
A 100pF capacitor is required adjacent to the Vcc2 pin. In addition, a large
capacitor (>uF) is required. The TDMA signal has a time-varying amplitude; therefore
the PAM draws on operation current corresponding to the instantaneous demand by the
RF power. The large capacitor near-by is the electric charge reservoir, providing current
on demand. The long electrical path from battery behaves as a large inductor; the
instantaneous demand on current will cause a voltage drop, resulting in poor ACPR.
On the evaluation board, a large shunt capacitor is added to protect the Vref pin
from power supply over-voltage during ON/OFF. This is similar but different from the
ESD. Therefore the rise and fall time test of the power down feature needs to be tested
with the shunt capacitor on Vref pin removed.
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