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| 型號(hào)： | ECM806 |
| 文件頁(yè)數(shù)： | 4/14頁(yè) |
| 文件大小： | 178K |
| 代理商： | ECM806 |
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EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
12
ECM806
6 x 6 mm Dual Mode Cellular TDMA/AMPS
3.5V POWER AMPLIFIER MODULE
PRELIMINARY DATA SHEET
SS-000489-000
Revision J
ECM806 Operating Principles and Key Features
ECM806 is a 6x6mm size Power Amplifier Module (PAM) for cellular band TDMA
(digital) and AMPS (analog) handset market..
The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded
modular package with a LGA signal pad.
I. In GaP HBT offers Reliability and Quality
EiCs proprietary InGaP HBT provides excellent reliability and is used in the
infrastructure industry. The InGaP HBT is inherently superior to AlGaAs HBT. The
surface defect density in InGaP is much lower than that of AlGaAs.
The HBT life test of EiC InGaP HBT has gone through 315
oC junction
temperature and 50kA/cm
2 for over 6000 hours (8 months), translating to multi-million
hours lifetime or longer in the operation envelope [1]. This kind of robust performance is
far superior to conventional AlGaAs HBT.
The InGaP HBT PAM goes through a product burn-in test as well. A large
sample group, usually 100 pieces, goes through burn-in test at an ambient temperature
of 125 to 145
oC for 1000 hours. The FIT number is than calculated based upon the data
collected. The MTTF is simply 1/FIT, this MTTF should agree with the HBT life test
results.
The agreement between the MTTF of HBT from life test and the FIT is essential:
it validates both tests! If there is a large discrepancy [2], the quality claim may be
flawed.
Although handset applications do not have as stringent operating requirements
as the infrastructure market, the high reliability of InGaP HBT offers an assurance to the
user of a high quality product designed for high volume production.
II. InGaP HBT and Patent-pending Circuit Design Offers Low Temperature Variation
Current gain of InGaP HBT varies about 10% over –40 to +85
oC range,
compared with 50% of AlGaAs HBT. This low gain variation over temperature, coupled
with the patent-pending circuit design approach, provides for more stable electrical
performance.
III. ECM806 Offers High Gain and Margin for Transmitter Chain Design
The typical gain of the ECM806 is 30dB. This high gain allows the driver
amplifier to run very linear which results in reduced current. Taking into account the 3dB
loss of the BPF in front of the PAM, the driver needs to deliver only 4dBm linear power.
The P1dB of the driver amplifier should be more than 10dBm.
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