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參數(shù)資料
| 型號： | EBJ41UF8BAS0-GN-F |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 1G X 64 DDR DRAM MODULE, ZMA204 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 |
| 文件頁數(shù)： | 7/21頁 |
| 文件大?。?/td> | 204K |
| 代理商： | EBJ41UF8BAS0-GN-F |
EBJ41UF8BAS0
Preliminary Data Sheet E1545E20 (Ver. 2.0)
15
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.5V
± 0.075V, VSS = 0V)
Parameter
Symbol
Data rate (Mbps)
max.
Unit
Notes
Operating current
(ACT-PRE)
(Another rank is in IDD2P1)
IDD0
1600
1333
1066
TBD
880
800
mA
Operating current
(ACT-PRE)
(Another rank is in IDD3N)
IDD0
1600
1333
1066
TBD
1080
856
mA
Operating current
(ACT-READ-PRE)
(Another rank is in IDD2P1)
IDD1
1600
1333
1066
TBD
1000
920
mA
Operating current
(ACT-READ-PRE)
(Another rank is in IDD3N)
IDD1
1600
1333
1066
TBD
1200
976
mA
IDD2P1
1600
1333
1066
TBD
560
480
mA
Fast PD Exit
Precharge power-down standby current
IDD2P0
1600
1333
1066
TBD
240
mA
Slow PD Exit
Precharge standby current
IDD2N
1600
1333
1066
TBD
720
mA
Precharge standby ODT current
IDD2NT
1600
1333
1066
TBD
720
mA
Precharge quiet standby current
IDD2Q
1600
1333
1066
TBD
720
640
mA
Active power-down current
(Always fast exit)
IDD3P
1600
1333
1066
TBD
592
mA
Active standby current
IDD3N
1600
1333
1066
TBD
960
880
mA
Operating current
(Burst read operating)
(Another rank is in IDD2P1)
IDD4R
1600
1333
1066
TBD
1520
1320
mA
Operating current
(Burst read operating)
(Another rank is in IDD3N)
IDD4R
1600
1333
1066
TBD
1720
1520
mA
Operating current
(Burst write operating)
(Another rank is in IDD2P1)
IDD4W
1600
1333
1066
TBD
1560
1360
mA
Operating current
(Burst write operating)
(Another rank is in IDD3N)
IDD4W
1600
1333
1066
TBD
1760
1560
mA
Burst refresh current
(Another rank is in IDD2P1)
IDD5B
1600
1333
1066
TBD
2440
2360
mA
Burst refresh current
(Another rank is in IDD3N)
IDD5B
1600
1333
1066
TBD
2640
2560
mA
All bank interleave read current
(Another rank is in IDD2P1)
IDD7
1600
1333
1066
TBD
2520
2080
mA
All bank interleave read current
(Another rank is in IDD3N)
IDD7
1600
1333
1066
TBD
2720
2280
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EC11.0001.001 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0001.201 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0001.301 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0001.401 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
| EC11.0021.001 | Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBJ41UF8BCF0 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Unbuffered DDR3 SDRAM DIMM |
| EBJ41UF8BCF0-DJ-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Unbuffered DDR3 SDRAM DIMM |
| EBJ41UF8BCF0-GN-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Unbuffered DDR3 SDRAM DIMM |
| EBJ41UF8BCS0 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB DDR3 SDRAM SO-DIMM |
| EBJ41UF8BCS0-DJ-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB DDR3 SDRAM SO-DIMM |
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