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參數(shù)資料
| 型號： | EBE41FE4ACFT-6E-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512M X 72 DDR DRAM MODULE, DMA240 |
| 封裝： | ROHS COMPLIANT, FBDIMM-240 |
| 文件頁數(shù)： | 10/22頁 |
| 文件大?。?/td> | 205K |
| 代理商： | EBE41FE4ACFT-6E-E |
EBE41FE4ACFT
Data Sheet E1091E30 (Ver. 3.0)
18
Serial PD Matrix for FB-DIMM
Byte No.
Function described
Byte value
Hex value
0
Number of serial PD bytes written / SPD device size / CRC coverage
116
92H
1
SPD revision
Revision 1.1
11H
2
Key byte / DRAM device type
DDR2 SDRAM FB-DIMM
09H
3
Voltage levels of this assembly
VDD = 1.8V, VCC = 1.5V
12H
4
SDRAM addressing
14-row, 11-column, 8-bank 49H
5
Module physical attributes
8.2mm
24H
6
Module Type / Thickness
FB-DIMM
07H
7
Module organization
2 ranks / 4bits
10H
8
Fine timebase (FTB) dividend / divisor
00H
9
Medium timebase dividend
1
01H
10
Medium timebase divisor
4
04H
11
SDRAM minimum cycle time (tCK (min.))
3.00ns
0CH
12
SDRAM maximum cycle time (tCK (max.))
8ns
20H
13
SDRAM /CAS latencies supported
CL = 3, 4, 5
33H
14
SDRAM minimum /CAS latencies time (tCAS)
15ns
3CH
15
SDRAM write recovery times supported
WR = 2 to 5
42H
16
SDRAM write recovery time (tWR)
15ns
3CH
17
SDRAM write latencies supported
WL = 2 to 8
72H
18
SDRAM additive latencies supported
AL = 0 to 4
50H
19
SDRAM minimum /RAS to /CAS delay (tRCD)
15ns
3CH
20
SDRAM minimum row active to row active delay (tRRD)
7.5ns
1EH
21
SDRAM minimum row precharge time (tRP)
15ns
3CH
22
SDRAM upper nibbles for tRAS and tRC
00H
23
SDRAM minimum active to precharge time (tRAS)
45ns
B4H
24
SDRAM minimum auto-refresh to active /auto-refresh time (tRC)
60ns
F0H
25
SDRAM minimum refresh recovery time delay (tRFC), LSB
127.5ns
FEH
26
SDRAM minimum refresh recovery time delay (tRFC), MSB
127.5ns
01H
27
SDRAM Internal write to read command delay (tWTR)
7.5ns
1EH
28
SDRAM Internal read to precharge command delay (tRTP)
7.5ns
1EH
29
SDRAM burst lengths supported
BL = 4, 8
03H
30
SDRAM terminations supported
ODT = 50, 75, 150
07H
31
SDRAM drivers supported
Supported
01H
32
SDRAM average refresh interval (tREFI) / double refresh mode bit /
high temperature self-refresh rate support indication
7.8
s Double/HT refresh
C2H
33
Tcasemax (TC (max.)) delta / DT4R4W delta
95
°C/ 0.40°C
51H
34
Psi T-A SDRAM at still air
*
3
××
35
SDRAM DT0
*
3
××
36
SDRAM DT2Q
*
3
××
37
SDRAM DT2P
*
3
××
38
SDRAM DT3N
*
3
××
39
SDRAM DT4R / mode bit
*
3
××
40
SDRAM DT5B
*
3
××
41
SDRAM DT7
*
3
××
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