
56F805 Technical Data, Rev. 16
26
Freescale Semiconductor
Table 3-7 Flash Timing Parameters
Operating Conditions: V
SS = VSSA = 0 V, VDD = VDDA = 3.0–3.6V, TA = –40° to +85°C, CL ≤ 50pF
Characteristic
Symbol
Min
Typ
Max
Unit
Figure
Program time
Tprog*
20
–
us
Erase time
Terase*
20
–
ms
Mass erase time
Tme*
100
–
ms
Endurance1
1.
One cycle is equal to an erase program and read.
ECYC
10,000
20,000
–
cycles
Data Retention1
DRET
10
30
–
years
The following parameters should only be used in the Manual Word Programming Mode
PROG/ERASE to NVSTR set up
time
Tnvs*
–5
–
us
NVSTR hold time
Tnvh*
–5
–
us
NVSTR hold time (mass erase)
Tnvh1*
–
100
–
us
NVSTR to program set up time
Tpgs*
–10
–
us
Recovery time
Trcv*
–1
–
us
Cumulative program
HV period2
2.
Thv is the cumulative high voltage programming time to the same row before next erase. The same address cannot be pro-
grammed twice before next erase.
Thv
–3
–
ms
Program hold time3
3.
Parameters are guaranteed by design in smart programming mode and must be one cycle or greater.
*The Flash interface unit provides registers for the control of these parameters.
Tpgh
––
–
Address/data set up time3
Tads
––
–
Address/data hold time3
Tadh
––
–