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參數(shù)資料
| 型號： | DS2422X |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Memory IC:Other |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, UUC |
| 文件頁數(shù)： | 16/23頁 |
| 文件大小： | 146K |
| 代理商： | DS2422X |
DS2422/DS2423
021998 23/23
NOTES:
1. All voltages are referenced to ground.
2. VPUP = external pull–up voltage.
3. Input load is to ground.
4. An additional reset or communication sequence cannot begin until the reset high time has expired.
5. Read data setup time refers to the time the host must pull the 1–Wire bus low to read a bit. Data is guaranteed
to be valid within 1
s of this falling edge.
6. Capacitance on the data pin could be 800 pF when power is first applied. If a 5 k
resistor is used to pull up the
data line to VPUP, 5 s after power has been applied the parasite capacitance will not affect normal communica-
tions.
7. The reset low time (tRSTL) should be restricted to a maximum of 960 s, to allow interrupt signaling, otherwise,
it could mask or conceal interrupt pulses.
8. VIH is a function of the external pull–up resistor and VPUP .
9. Under certain low voltage conditions VILMAX may have to be reduced to as much as 0.5V to always guarantee a
presence pulse.
10. The counter inputs are designed for interfacing to mechanical switches and piezo sensors. If interfacing to digital
circuits, one should use an open–drain driver.
11. A lower impedance pull–up, e. g., for reed switches, can be achieved by connecting an external resistor from the
counter input to VBAT.
12. Read and write scratchpad (all 32 bytes) at VBAT of 3.0 V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS2423P/T&R | SPECIALTY MEMORY CIRCUIT, PDSO6 |
| DS2423P | SPECIALTY MEMORY CIRCUIT, PDSO6 |
| DS2423X | SPECIALTY MEMORY CIRCUIT, UUC |
| DS2423 | 4K X 1 STANDARD SRAM, PDSO6 |
| DS2422 | 1K X 1 STANDARD SRAM, PDSO6 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS2423 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:4kbit 1-Wire RAM with Counter |
| DS2423D/T&R | 制造商:Maxim Integrated Products 功能描述:IC SRAM 4KBIT 6FLIPCHIP |
| DS2423D/T&R | 功能描述:IC SRAM 4KBIT 6FCHIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
| DS2423MRAB0 | 制造商:Thomas & Betts 功能描述:300A,NLT,3P4W,MG,423,3P480V |
| DS2423P | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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