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參數(shù)資料
| 型號(hào)： | DS2415V |
| 英文描述： | 1-Wire Time Chip |
| 中文描述： | 1 - Wire時(shí)鐘芯片 |
| 文件頁(yè)數(shù)： | 4/20頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | DS2415V |
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DS1385/DS1387
012496 4/20
WR (RTC Write Input) –
The WR signal is an active low
signal. The WR signal defines the time period during
which data is written to the addressed clock register.
CS (RTC Chip Select Input) –
The Chip Select signal
must be asserted low during a bus cycle for the RTC
portion of the DS1385/DS1387 to be accessed. CS
must be kept in the active state during RD and WR tim-
ing. Bus cycles which take place without asserting CS
will latch addresses but no access will occur.
IRQ (Interrupt Request Output)
–
The IRQ pin is an
active low output of the DS1385/DS1387 that can be
tied to an interrupt input on a processor. The IRQ output
remains low as long as the status bit causing the inter-
rupt is present and the corresponding interrupt–enable
bit is set. To clear the IRQ pin, the application program
normally reads the C register.
When no interrupt conditions are present, the IRQ level
is in the high impedance state. Multiple interrupting de-
vices can be connected to an IRQ bus. The IRQ bus is
an open drain output and requires an external pull–up
resistor.
AS0 (RAM Address Strobe Zero) –
The rising edge of
AS0 latches the lower eight bits of the 4K x 8 RAM ad-
dress.
AS1 (RAM Address Strobe One) –
The rising edge of
AS1 latches the upper four bits of the 4K x 8 RAM ad-
dress.
OER (RAM Output Enable) –
OER is active low and
identifies the time period when the DS1385/DS1387
drives the bus with RAM read data.
WER (RAM Write Enable)
–
WER is an active low sig-
nal and is used to perform writes to the 4K x 8 RAM por-
tion of the DS1385/DS1387.
(DS1385 ONLY)
X1, X2 –
Connections for a standard 32.768 KHz quartz
crystal. When ordering, request a load capacitance of 6
pF. The internal oscillator circuitry is designed for opera-
tion with a crystal having a specified load capacitance
(CL) of 6 pF. The crystal is connected directly to the X1
and X2 pins. There is no need for external capacitors or
resistors. Note: X1 and X2 are very high impedance
nodes. It is recommended that they and the crystal be
guard–ringed with ground and that high frequency sig-
nals be kept away from the crystal area. For more
information on crystal selection and crystal layout con-
siderations, please consult Application Note 58, “Crys-
tal Considerations with Dallas Real Time Clocks”.
V
BAT
, BGND
–
Battery input for any standard 3 volt lithi-
um cell or other energy source. Battery voltage must be
held between 2.5 and 3.7 volts for proper operation. The
nominal write protect trip point voltage is set by the inter-
nal circuitry and is 4.25 volts typical. A maximum load of
1
μ
A at 25
°
C and 3.0V on V
BAT
should in the absence of
power be used to size the external energy source.
The battery should be connected directly to the V
BAT
pin.
A diode must not be placed in series with the battery to
the V
BAT
pin. Furthermore, a diode is not necessary
because reverse charging current protection circuitry is
provided internal to the device and has passed the
requirements of Underwriters Laboratories for UL listing
(E99151).
ADDRESS MAP
The address map of the DS1385/DS1387 is shown in
Figure 2. The address map consists of the RTC and the
4K X 8 NV SRAM section. The RTC section contains
50–bytes of user RAM, 10–bytes of RAM that contain
the RTC time, calendar, and alarm data, and 4–bytes
which are used for control and status. All 64–bytes can
be directly written or read except for the following:
1. Registers C and D are read-only.
2. Bit–7 of Register A is read-only.
3. The high order bit of the seconds byte is read-only.
RTC (REAL TIME CLOCK)
The RTC function is the same as the DS1287 Real Time
Clock. Access to the RTC is accomplished with four
controls: ALE, RD, WR and CS. The RTC is the same in
the DS1287 with the following exceptions:
1. The MOT pin on the DS1285/DS1287 is not present
on the DS1385/DS1387. The bus selection capabili-
ty of the DS1285/DS1287 has been eliminated. Only
the Intel bus interface timing is applicable.
2. The RESET pin on the DS1285/DS1287 is not pres-
ent on the DS1385/DS1387. The DS1385/DS1387
will operate the same as the DS1285/DS1287 with
RESET tied to V
CC
.
相關(guān)PDF資料 |
PDF描述 |
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| DS2415X | 1-Wire Time Chip |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS2415X | 功能描述:IC TIME CHIP 1-WIRE CSP RoHS:否 類別:集成電路 (IC) >> 時(shí)鐘/計(jì)時(shí) - 實(shí)時(shí)時(shí)鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 類型:時(shí)鐘/日歷 特點(diǎn):警報(bào)器，閏年，SRAM 存儲(chǔ)容量:- 時(shí)間格式:HH:MM:SS（12/24 小時(shí)） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
| DS2416FP00K | 制造商:Thomas & Betts 功能描述:200A,CON,3P4W,MG,416,3P208V,CC |
| DS2416FR000 | 制造商:Thomas & Betts 功能描述:200A,REC,3P4W,MG,416,3P208V,SC |
| DS2416FRAB0 | 制造商:Thomas & Betts 功能描述:200A,REC.,3P4W,3PHASE,208V |
| DS2416MP000 | 制造商:Thomas & Betts 功能描述:DS2416MP000 200A,PLG,3P4W,MG,416 制造商:Thomas & Betts 功能描述:200A,PLG,3P4W,MG,416,3P208V |
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