參數(shù)資料
型號(hào): DS1993L-F5
廠商: DALLAS SEMICONDUCTOR
元件分類(lèi): Memory IC:Other
英文描述: SPECIALTY MEMORY CIRCUIT, MRDB2
封裝: MICRO CAN
文件頁(yè)數(shù): 15/23頁(yè)
文件大小: 537K
代理商: DS1993L-F5
DS1992/DS1993/DS1994
22 of 23
102199
PHYSICAL SPECIFICATIONS
Size
See mechanical drawing
Weight
3.3 grams (F5 package)
Humidity
90% RH at 50
°C
Altitude
10,000 feet
Expected Service Life
10 years at 25
°C
Safety
Meets UL#913 (4th Edit.); Intrinsically Safe Apparatus,
Approved under Entity Concept for use in Class I,
Division 1, Group A, B, C and D Locations
ABSOLUTE MAXIMUM RATINGS*
Voltage on any Pin Relative to Ground
–0.5V to +7.0V
Operating Temperature
–40
°C to +70°C
Storage Temperature
–40
°C to +70°C
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(VPUP=2.8V to 6.0V; -40°C to +70°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Logic 1
VIH
2.2
VCC +0.3
V
1,8
Logic 0
VIL
-0.3
+0.8
V
1
Output Logic Low @ 4 mA
VOL
0.4
V
1
Output Logic High
VOH
VPUP
6.0
V
1,2
Input Load Current
IL
5
A
3
CAPACITANCE
(tA = 25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
I/O (1-Wire)
CIN/OUT
100
800
pF
6
AC ELECTRICAL CHARACTERISTICS
(VPUP=2.8V to 6.0V; -40°C to +70°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Time Slot
tSLOT
60
120
s
Write 1 Low Time
tLOW1
1
15
s
Write 0 Low Time
tLOW0
60
120
s
Read Data Valid
tRDV
exactly 15
s
Release Time
tRELEASE
0
15
45
s
Read Data Setup
tSU
1
s
5
Interrupt
tINT
960
4800
s
9
Recovery Time
tREC
1
s
Reset Time High
tRSTH
480
s
4
Reset Time Low
tRSTL
480
960
s
7
Presence Detect High
tPDH
15
60
s
Presence Detect Low
tPDL
60
240
s
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