參數(shù)資料
型號: DS12R885S-5+T&R
廠商: Maxim Integrated Products
文件頁數(shù): 2/23頁
文件大小: 0K
描述: IC RTC W/RAM 128 BYTE 24-SOIC
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 1,000
類型: 時鐘/日歷
特點: 警報器,閏年,NVSRAM,方波輸出,涓流充電器
存儲容量: 114B
時間格式: HH:MM:SS(12/24 小時)
數(shù)據(jù)格式: YY-MM-DD-dd
接口: 并聯(lián)
電源電壓: 4.5 V ~ 5.5 V
電壓 - 電源,電池: 2 V ~ 3.05 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 24-SOIC W
包裝: 帶卷 (TR)
DS12R885/DS12CR887/DS12R887
RTCs with Constant-Voltage Trickle Charger
10
Maxim Integrated
Pin Description (continued)
PIN
SO
EDIP
BGA
NAME
FUNCTION
12, 16
12
D5–D8,
E1–E8,
F5–F8
GND
Ground
13
C1
CS
Chip-Select Input. The active-low chip-select signal must be asserted low for a bus cycle
in the DS12R885 to be accessed. CS must be kept in the active state during DS and AS
for Motorola timing and during DS and R/W for Intel timing. Bus cycles that take place
without asserting CS latch addresses, but no access occurs. When VCC is below VPF volts,
the DS12R885 inhibits access by internally disabling the CS input. This action protects the
RTC data and the RAM data during power outages.
14
C3
AS
Address Strobe Input. A positive-going address-strobe pulse serves to demultiplex the
bus. The falling edge of AS causes the address to be latched within the DS12R885. The
next rising edge that occurs on the AS bus clears the address regardless of whether CS is
asserted. An address strobe must immediately precede each write or read access. If a
write or read is performed with CS deasserted, another address strobe must be performed
prior to a read or write access with CS asserted.
15
C2
R/W
Read/Write Input. The R/W pin has two modes of operation. When the MOT pin is
connected to VCC for Motorola timing, R/W is at a level that indicates whether the current
cycle is a read or write. A read cycle is indicated with a high level on R/W while DS is high.
A write cycle is indicated when R/W is low during DS. When the MOT pin is connected to
GND for Intel timing, the R/W signal is an active-low signal. In this mode, the R/W pin
operates in a similar fashion as the write-enable signal (WE) on generic RAMs. Data are
latched on the rising edge of the signal.
22
2, 3, 16,
20–22
A3
N.C.
No Connection. This pin should remain unconnected. On the EDIP, these pins are missing
by design.
17
A1
DS
Data Strobe or Read Input. The DS pin has two modes of operation depending on the level of
the MOT pin. When the MOT pin is connected to VCC, Motorola bus timing is selected. In this
mode, DS is a positive pulse during the latter portion of the bus cycle and is called data
strobe. During read cycles, DS signifies the time that the DS12R885 is to drive the
bidirectional bus. In write cycles, the trailing edge of DS causes the DS12R885 to latch the
written data. When the MOT pin is connected to GND, Intel bus timing is selected. DS
identifies the time period when the DS12R885 drives the bus with read data. In this mode, the
DS pin operates in a similar fashion as the output-enable (OE) signal on a generic RAM.
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