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參數(shù)資料
| 型號： | DS1265AB |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | 8M Nonvolatile SRAM(8M非易失性靜態(tài)RAM) |
| 中文描述： | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | DS1265AB |
DS1265Y/AB
8M Nonvolatile SRAM
DS1265Y/AB
060598 1/8
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Unlimited write cycles
Low–power CMOS operation
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
Full
±
10% V
CC
operating range (DS1265Y)
Optional
±
5% V
CC
operating range (DS1265AB)
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
PIN ASSIGNMENT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
V
CC
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
NC
NC
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
36–PIN ENCAPSULATED PACKAGE
740 MIL EXTENDED
PIN DESCRIPTION
A0 – A19
DQ0 – DQ7
CE
WE
OE
V
CC
GND
NC
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Power (+5V)
– Ground
– No Connect
DESCRIPTION
The DS1265 8M Nonvolatile SRAMs are 8,388,608–bit,
fully static nonvolatile SRAMs organized as 1,048,576
words by 8 bits. Each NV SRAM has a self–contained
lithium energy source and control circuitry which
constantly monitors V
CC
for an out–of–tolerance condi-
tion. When such a condition occurs, the lithium energy
source is automatically switched on and write protection
is unconditionally enabled to prevent data corruption.
There is no limit on the number of write cycles which can
be executed and no additional support circuitry is
required for microprocessor interfacing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1265Y | 8M Nonvolatile SRAM(8M非易失性靜態(tài)RAM) |
| DS1265Y | 8M Nonvolatile SRAM |
| DS1270AB | 16M Nonvolatile SRAM(16M非易失性靜態(tài)RAM) |
| DS1270Y | 16M Nonvolatile SRAM(16M非易失性靜態(tài)RAM) |
| DS1270W | 3.3V 16Mb Nonvolatile SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1265AB-100 | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265AB-100+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265AB-100-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1265AB-70 | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265AB-70+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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