參數(shù)資料
型號： DS1265Y
廠商： DALLAS SEMICONDUCTOR
元件分類： DRAM
英文描述： 8M Nonvolatile SRAM
中文描述： 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
文件頁數(shù)： 1/8頁
文件大小： 160K
代理商： DS1265Y
1 of 8
110602
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full 10% V
CC
operating range (DS1265Y)
Optional 5% V
CC
operating range
(DS1265AB)
Optional industrial temperature range of
-40 C to +85 C, designated IND
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A19
DQ0 - DQ7
CE
WE
OE
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
DESCRIPTION
The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as
1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry which constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
DS1265Y/AB
8M Nonvolatile SRAM
www.maxim-ic.com
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1
2
3
4
5
6
7
8
9
10
11
12
35
34
33
32
31
30
29
28
27
26
25
24
36-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
V
CC
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
36
23
22
21
NC
NC
DQ0
DQ1
GND
DQ2
DQ3
DQ4
19
20
相關(guān)PDF資料
PDF描述
DS1270AB 16M Nonvolatile SRAM(16M非易失性靜態(tài)RAM)
DS1270Y 16M Nonvolatile SRAM(16M非易失性靜態(tài)RAM)
DS1270W 3.3V 16Mb Nonvolatile SRAM
DS1302 Trickle Charge Timekeeping Chip
DS1305 Serial Alarm Real Time Clock (RTC)(串行報警實時時鐘（RTC）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1265Y/AB 制造商:MAXIM 制造商全稱:Maxim Integrated Products 功能描述:8M Nonvolatile SRAM
DS1265Y-100 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1265Y-100+ 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1265Y-100-IND 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based)
DS1265Y-70 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
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