- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381717 > DS1270AB (DALLAS SEMICONDUCTOR) 16M Nonvolatile SRAM(16M非易失性靜態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號(hào)： | DS1270AB |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | 16M Nonvolatile SRAM(16M非易失性靜態(tài)RAM) |
| 中文描述： | 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | DS1270AB |
DS1270Y/AB
16M Nonvolatile SRAM
DS1270Y/AB
041598 1/8
FEATURES
5 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Unlimited write cycles
Low–power CMOS operation
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
Full
±
10% V
CC
operating range (DS1270Y)
Optional
±
5% V
CC
operating range (DS1270AB)
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
PIN ASSIGNMENT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
V
CC
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
NC
A20
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
36–PIN ENCAPSULATED PACKAGE
740 MIL EXTENDED
PIN DESCRIPTION
A0 – A20
DQ0 – DQ7
CE
WE
OE
V
CC
GND
NC
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Power (+5V)
– Ground
– No Connect
DESCRIPTION
The
DS1270
16,777,216–bit, fully static nonvolatile SRAMs orga-
nized as 2,097,152 words by 8 bits. Each NV SRAM has
a self–contained lithium energy source and control cir-
cuitry which constantly monitors V
CC
for an out–of–tol-
erance condition. When such a condition occurs, the
16M
Nonvolatile
SRAMs
are
lithium energy source is automatically switched on and
write protection is unconditionally enabled to prevent
data corruption. There is no limit on the number of write
cycles which can be executed and no additional support
circuitry is required for microprocessor interfacing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1270Y | 16M Nonvolatile SRAM(16M非易失性靜態(tài)RAM) |
| DS1270W | 3.3V 16Mb Nonvolatile SRAM |
| DS1302 | Trickle Charge Timekeeping Chip |
| DS1305 | Serial Alarm Real Time Clock (RTC)(串行報(bào)警實(shí)時(shí)時(shí)鐘（RTC）) |
| DS1306 | Serial Alarm Real Time Clock (RTC)(串行報(bào)警實(shí)時(shí)時(shí)鐘（RTC）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1270AB-100 | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270AB-100# | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270AB-70 | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270AB-70# | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270AB-70IND | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。