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參數(shù)資料
| 型號(hào)： | DS1258Y |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 Nonvolatile SRAM(128K x 16 非易失性靜態(tài)RAM) |
| 中文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, PDIP40 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | DS1258Y |
DS1258Y/AB
128K x 16 Nonvolatile SRAM
DS1258Y/AB
022598 1/9
FEATURES
10 year minimum data retention in the absence of
external power
Data is automatically protected during a power loss
Separate upper byte and lower byte chip select inputs
Unlimited write cycles
Low–power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
Full
±
10% operating range (DS1258Y)
Optional
±
5% operating range (DS1258AB)
PIN ASSIGNMENT
40–PIN ENCAPSULATED PACKAGE
740 MIL EXTENDED
OE
CEU
CEL
DQ15
DQ14
DQ13
DQ12
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
DQ11
DQ10
DQ9
DQ8
GND
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A8
A7
A6
A5
A4
A3
A2
A1
A0
PIN DESCRIPTION
A0–A16
DQ0–DQ15
CEU
CEL
WE
OE
V
CC
GND
– Address Inputs
– Data In/Data Out
– Chip Enable Upper Byte
– Chip Enable Lower Byte
– Write Enable
– Output Enable
– Power Supply (+5V)
– Ground
DESCRIPTION
The DS1258 128K x 16 Nonvolatile SRAMs are
2,097,152–bit fully static, nonvolatile SRAMs, orga-
nized as 131,072 words by 16 bits. Each NV SRAM has
a self contained lithium energy source and control cir-
cuitry which constantly monitors V
CC
for an out–of–tol-
erance condition. When such a condition occurs, the
lithium energy source is automatically switched on and
write protection is unconditionally enabled to prevent
data corruption. DIP–package DS1258 devices can be
used in place of solutions which build nonvolatile 128K x
16 memory by utilizing a variety of discrete components.
There is no limit on the number of write cycles that can
be executed and no additional support circuitry is
required for microprocessor interfacing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1258W | 3.3V 128K x 16 Nonvolatile SRAM(3.3V 128K x 16 非易失性靜態(tài)RAM) |
| DS1259 | Battery Manager Chip(電池管理芯片) |
| DS1260 | Smart Battery(智能電池) |
| DS1265AB | 8M Nonvolatile SRAM(8M非易失性靜態(tài)RAM) |
| DS1265Y | 8M Nonvolatile SRAM(8M非易失性靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1258Y/AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 16 Nonvolatile SRAM |
| DS1258Y-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258Y-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258Y-70 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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