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參數(shù)資料
| 型號(hào)： | DS1258W |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 128K x 16 Nonvolatile SRAM(3.3V 128K x 16 非易失性靜態(tài)RAM) |
| 中文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 150 ns, PDIP40 |
| 封裝： | 0.740 INCH, PLASTIC, DIP-40 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 71K |
| 代理商： | DS1258W |
DS1258W
3.3V 128K x 16 Nonvolatile SRAM
DS1258W
PRELIMINARY
022598 1/9
FEATURES
10 year minimum data retention in the absence of
external power
Data is automatically protected during a power loss
Separate upper byte and lower byte chip select inputs
Unlimited write cycles
Low–power CMOS
Read and write access times as fast as 150 ns
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
PIN ASSIGNMENT
40–PIN ENCAPSULATED PACKAGE
740 MIL EXTENDED
OE
CEU
CEL
DQ15
DQ14
DQ13
DQ12
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
DQ11
DQ10
DQ9
DQ8
GND
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A8
A7
A6
A5
A4
A3
A2
A1
A0
PIN DESCRIPTION
A0–A16
DQ0–DQ15
CEU
CEL
WE
OE
V
CC
GND
– Address Inputs
– Data In/Data Out
– Chip Enable Upper Byte
– Chip Enable Lower Byte
– Write Enable
– Output Enable
– Power Supply (+3.3V)
– Ground
DESCRIPTION
The DS1258W 3.3V 128K x 16 Nonvolatile SRAM is a
2,097,152–bit fully static, nonvolatile SRAM, organized
as 131,072 words by 16 bits. Each NV SRAM has a self
contained lithium energy source and control circuitry
which constantly monitors V
CC
for an out–of–tolerance
condition. When such a condition occurs, the lithium
energy source is automatically switched on and write
protection is unconditionally enabled to prevent data
corruption. DIP–package DS1258W devices can be
used in place of solutions which build nonvolatile
128K x 16 memory by utilizing a variety of discrete com-
ponents. There is no limit on the number of write cycles
that can be executed and no additional support circuitry
is required for microprocessor interfacing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1258W-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258W-100IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258W-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258W-100IND# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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