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參數(shù)資料
| 型號(hào)： | DS1220AD |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | 16K Nonvolatile SRAM(16K非易失性SRAM) |
| 中文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 90K |
| 代理商： | DS1220AD |
DS1220AB/AD
16K Nonvolatile SRAM
DS1220AB/AD
021998 1/10
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Directly replaces 2K x 8 volatile static RAM or
EEPROM
Unlimited write cycles
Low–power CMOS
JEDEC standard 24–pin DIP package
Read and write access times as fast as 100 ns
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
Full
±
10% V
CC
operating range (DS1220AD)
Optional
±
5% V
CC
operating range (DS1220AB)
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
PIN ASSIGNMENT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A8
A9
A10
DQ7
DQ6
DQ5
DQ4
DQ3
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
CE
OE
WE
V
CC
24–PIN ENCAPSULATED PACKAGE
720 MIL EXTENDED
PIN DESCRIPTION
A0–A10
DQ0–DQ7
CE
WE
OE
V
CC
GND
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Power (+5V)
– Ground
DESCRIPTION
The DS1220AB and DS1220AD are 16,384–bit, fully
static, nonvolatile SRAMs organized as 2048 words by
8 bits. Each NV SRAM has a self–contained lithium en-
ergy source and control circuitry which constantly moni-
tors V
CC
for an out–of–tolerance condition. When such
a condition occurs, the lithium energy source is auto-
matically switched on and write protection is uncondi-
tionally enabled to prevent data corruption. The NV
SRAMs can be used in place of existing 2K x 8 SRAMs
directly conforming to the popular bytewide 24–pin DIP
standard. The devices also match the pinout of the
2716 EPROM and the 2816 EEPROM, allowing direct
substitution while enhancing performance. There is no
limit on the number of write cycles that can be executed
and no additional support circuitry is required for micro-
processor interfacing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1220Y | 16K Nonvolatile SRAM(16K 非易失性靜態(tài)RAM) |
| DS1221 | Nonvolatile Controller x 4 Chip(非易失性控制器x 4芯片) |
| DS1222 | BankSwitch Chip(存儲(chǔ)器組切換芯片) |
| DS1225AB | 64K Nonvolatile SRAM(64K非易失性靜態(tài)RAM) |
| DS1225AD | 16K Nonvolatile SRAM(64K非易失性SRAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220AD-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-100+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-100IND | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AD-100IND+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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