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參數(shù)資料
| 型號(hào)： | DS1225AB |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64K Nonvolatile SRAM(64K非易失性靜態(tài)RAM) |
| 中文描述： | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | DS1225AB |
DS1225AB/AD
64K Nonvolatile SRAM
DS1225AB/AD
021998 1/9
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Directly replaces 8K x 8 volatile static RAM or
EEPROM
Unlimited write cycles
Low–power CMOS
JEDEC standard 28–pin DIP package
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
Full
±
10% V
CC
operating range (DS1225AD)
Optional
±
5% V
CC
operating range (DS1225AB)
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
PIN ASSIGNMENT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
NC
A8
A9
A11
A10
DQ7
DQ6
DQ5
DQ4
DQ3
WE
OE
CE
28–PIN ENCAPSULATED PACKAGE
720 MIL EXTENDED
PIN DESCRIPTION
A0–A12
DQ0–DQ7
CE
WE
OE
V
CC
GND
NC
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Power (+5V)
– Ground
– No Connect
DESCRIPTION
The DS1225AB and DS1225AD are 65,536–bit, fully
static, nonvolatile SRAMs organized as 8192 words by
8 bits. Each NV SRAM has a self–contained lithium en-
ergy source and control circuitry which constantly moni-
tors V
CC
for an out–of–tolerance condition. When such
a condition occurs, the lithium energy source is auto-
matically switched on and write protection is uncondi-
tionally enabled to prevent data corruption. The NV
SRAMs can be used in place of existing 8K x 8 SRAMs
directly conforming to the popular bytewide 28–pin DIP
standard. The devices also match the pinout of the 2764
EPROM and the 2864 EEPROM, allowing direct substi-
tution while enhancing performance. There is no limit
on the number of write cycles that can be executed and
no additional support circuitry is required for micropro-
cessor interfacing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1225AD | 16K Nonvolatile SRAM(64K非易失性SRAM) |
| DS1225Y | 64K Nonvolatile SRAM(64K 非易失性靜態(tài)RAM) |
| DS1230AB(中文) | 256K NV SRAM(256K非易失性SRAM) |
| DS1230W | 3.3V 256K Nonvolatile SRAM(3.3V 256K 非易失性靜態(tài)RAM) |
| DS1230Y | 256K Nonvolatile SRAM(256K 非易失性靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1225AB/AD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64k Nonvolatile SRAM |
| DS1225AB-150 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225AB-150+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225AB-150IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225AB-150-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
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