- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381717 > DS1220Y (MAXIM INTEGRATED PRODUCTS INC) 16K Nonvolatile SRAM(16K 非易失性靜態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | DS1220Y |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | DRAM |
| 英文描述： | 16K Nonvolatile SRAM(16K 非易失性靜態(tài)RAM) |
| 中文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| 封裝： | 0.720 INCH, PLASTIC, DIP-24 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 83K |
| 代理商： | DS1220Y |
DS1220Y
16K Nonvolatile SRAM
DS1220Y
021998 1/8
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Directly replaces 2K x 8 volatile static RAM or
EEPROM
Unlimited write cycles
Low–power CMOS
JEDEC standard 24–pin DIP package
Read and write access times as fast as 100 ns
Full
±
10% operating range
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
PIN ASSIGNMENT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A8
A9
A10
DQ7
DQ6
DQ5
DQ4
DQ3
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
CE
OE
WE
V
CC
24–PIN ENCAPSULATED PACKAGE
720 MIL EXTENDED
PIN DESCRIPTION
A0–A10
DQ0–DQ7
CE
WE
OE
V
CC
GND
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Power (+5V)
– Ground
DESCRIPTION
The DS1220Y 16K Nonvolatile SRAM is a 16,384–bit,
fully static, nonvolatile RAM organized as 2048 words
by 8 bits. Each NV SRAM has a self–contained lithium
energy source and control circuitry which constantly
monitors V
CC
for an out–of–tolerance condition. When
such a condition occurs, the lithium energy source is
automatically switched on and write protection is uncon-
ditionally enabled to prevent data corruption. The NV
SRAM can be used in place of existing 2K x 8 SRAMs
directly conforming to the popular bytewide 24–pin DIP
standard. The DS1220Y also matches the pinout of the
2716 EPROM or the 2816 EEPROM, allowing direct
substitution while enhancing performance. There is no
limit on the number of write cycles that can be executed
and no additional support circuitry is required for micro-
processor interfacing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1221 | Nonvolatile Controller x 4 Chip(非易失性控制器x 4芯片) |
| DS1222 | BankSwitch Chip(存儲器組切換芯片) |
| DS1225AB | 64K Nonvolatile SRAM(64K非易失性靜態(tài)RAM) |
| DS1225AD | 16K Nonvolatile SRAM(64K非易失性SRAM) |
| DS1225Y | 64K Nonvolatile SRAM(64K 非易失性靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220Y-100 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220Y-100+ | 制造商:Maxim Integrated Products 功能描述:NVRAM NVSRAM PARALLEL 16KBIT 5V - Rail/Tube |
| DS1220Y-100-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1220Y-100IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220Y-120 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。