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參數(shù)資料
| 型號： | DP3S1MX32PY5-10CI |
| 英文描述： | x32 SRAM Module |
| 中文描述： | X32號的SRAM模塊 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 510K |
| 代理商： | DP3S1MX32PY5-10CI |
DP3S1MX32PY5
Dense-Pac Microsystems, Inc.
AD VANCED IN FOR MA TION
2
30A244-00
REV. A
RECOMMENDED OPERATING RANGE
4
Characteristic
10ns
12, 15, 20ns
Input HIGH Voltage
Input LOW Voltage
Symbol
Min.
3.135
3.0
2.0
-0.3
2
0
-40
Typ.
3.3
3.3
Max.
3.465
3.6
V
DD
+ 0.3
3
0.8
+ 70
+ 85
Unit
V
V
DD
Supply Voltage
V
IH
V
IL
V
V
T
A
Operating Temperature
C
CI
+ 25
+ 25
o
C
DC OUTPUT CHARACTERISTICS
Parameter
Conditions
HIGH Voltage
I
OH
= -2mA
LOW Voltage
I
OL
= + 2mA
Symbol
V
OH
V
OL
Min. Max. Unit
2.4
0.4
V
V
ABSOLUTE MAXIMUM RATINGS
4
Parameter
Storage Temperature
Temperature Under Bias
Supply Voltage
1
Input/Output Voltage
1
Symbol
T
STC
T
BIAS
V
DD
V
I/O
Value
Unit
°
C
°
C
V
V
-55 to + 125
-55 to + 125
-0.5 to + 4.6
-0.5 to + 4.6
DC OPERATING CHARACTERISTICS:
Over operating ranges
Test Conditions
Symbol
Characteristics
Input
Leakage Current
Output
Leakage Current
Dynamic
Operating Current
Full Standby Supply
Current (CMOS)
Standby Current (TTL)
Output Low Voltage
Output High Voltage
Min.
Max.
Unit
I
IN
V
IN
= 0V to V
DD
, V
DD
= max.
-2
+ 2
μ
A
I
OUT
V
I/O
= 0V to V
DD
,
V
DD
= max., CE = V
IH
CE = V
IL
, V
DD
= max.
I
OUT
= 0mA, f = f max.
f = 0, V
IN
≥
V
-0.2V or
V
IN
≤
V
SS
+ 0.2V, CE
≥
V
DD
-0.2V
CE = V
IH
, f = f max.
I
OUT
= + 2.0mA
I
OUT
= -2.0mA
-1
+ 1
μ
A
I
CC
900
mA
I
SB1
I
SB2
V
OL
V
OH
8
mA
210
0.4
mA
V
V
2.4
CAPACITANCE
5
:
T
A
= 25
°
C, F = 1.0MHz
Symbol
Parameter
C
ADR
Address Input
C
CE
Chip Enable
C
BS
Byte Select
C
WE
Write Enable
C
OE
Output Enable
C
I/O
Data Input/Output
Max.
20
20
15
20
20
15
Unit
Condition
pF
V
IN2
= 0V
+ 3.3V
780
1200
C
L
**
D
OUT
Figure 1.
Output Load
** Including Probe and Jig Capacitance.
OUTPUT LOAD
Parameters Measured
except t
LZ
, t
HZ
, t
OHZ
, t
OLZ
, and t
WHZ
t
LZ
, t
HZ
, t
OHZ
, t
OLZ
, and t
WHZ
Load
1
2
C
L
30pF
5pF
AC TEST CONDITIONS
Input Pulse Levels
Input Pulse Rise and Fall Times
Input and Output Timing Reference Levels
0V to 3.0V
2ns
1.5V
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