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參數(shù)資料
| 型號(hào)： | DD28F032SA-070 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| 中文描述： | 4M X 8 FLASH 12V PROM, 70 ns, PDSO56 |
| 封裝： | 14 X 20 MM, 1.20 MM HEIGHT, TSOP-56 |
| 文件頁數(shù)： | 35/49頁 |
| 文件大小： | 1402K |
| 代理商： | DD28F032SA-070 |
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E
6.8 AC Characteristics for WE#
—Controlled Command Write Operations
(1)
(Continued)
V
CC
= 5.0V ± 0.5V, 5.0V ± 0.25V, T
A
= 0°C to +70°C
DD28F032SA
35
Versions
V
CC
± 5%
DD28F032SA-070
Unit
V
CC
± 10%
DD28F032SA-080
DD28F032SA-100
Sym
Parameter
RP# Hold
from Valid
Status
Register
(CSR, GSR,
BSR) Data
and RY/BY#
High
RP# High
Recovery to
WE# Going
Low
Write
Recovery
before Read
V
PP
Hold from
Valid Status
Register
(CSR, GSR,
BSR) Data
and RY/BY#
High
Duration of
Word/Byte
Program
Operation
Duration of
Block Erase
Operation
Notes
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
t
RHPL
3
0
0
0
ns
t
PHWL
1
1
1
μs
t
WHGL
60
65
65
ns
t
QVVL
0
0
0
μs
t
WHQV
1
4.5
6
Note
7
4.5
6
Note
7
4.5
6
Note
7
μs
t
WHQV
2
4
0.3
10
0.3
10
0.3
10
sec
NOTES:
For 28F016SA No. 1: CE
X
# is defined as the latter of CE
0
# or CE
1
# going low or the first of CE
0
# or CE
1
# going high.
For 28F016SA No. 2: CE
X
# is defined as the latter of CE
0
# or CE
2
# going low or the first of CE
0
# or CE
2
# going high.
1. Read timings during data program and block erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested
4. Data program/block erase durations are measured to valid Status Register data.
5. Word/byte program operations are typically performed with 1 programming pulse.
6. Address and data are latched on the rising edge of WE# for all command write operations.
7.
This information will be available in a technical paper. Please call Intel’s Applications Hotline or your local sales office for
more information.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DD28F032SA-080 | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA-100 | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY |
| DD28F032SA-150 | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA100 | x8/x16 Flash EEPROM |
| DD28F032SA70 | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DD28F032SA-080 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| DD28F032SA-100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
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