參數(shù)資料
型號: DD28F032SA-070
廠商: INTEL CORP
元件分類: DRAM
英文描述: 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
中文描述: 4M X 8 FLASH 12V PROM, 70 ns, PDSO56
封裝: 14 X 20 MM, 1.20 MM HEIGHT, TSOP-56
文件頁數(shù): 16/49頁
文件大?。?/td> 1402K
代理商: DD28F032SA-070
DD28F032SA
E
16
NOTES:
1. RA can be the GSR address or any BSR address. See Figures 4 and 5 for Extended Status Register Memory Maps.
2. Upon device power-up, all BSR lock-bits come up locked. The Upload Status Bits command must be written to reflect the
actual lock-bit status.
3. A
is automatically complemented to load the second byte of data. BYTE# must be at V
IL
.
The A
0
value determines which WD/BC is supplied first: A
0
= 0 looks at the WDL/BCL, A
0
= 1 looks at the WDH/BCH.
4. BCH/WCH must be at 00H for this product because of the 256-byte (128-word) Page Buffer size and to avoid writing the
Page Buffer contents to more than one 256-byte segment within an array block. They are simply shown for future Page
Buffer expandability.
5. In x16 mode, only the lower byte DQ
0-7
is used for WCL and WCH. The upper byte DQ
8-15
is a don’t care.
6. PBA and PD (whose count is given in cycles 2 and 3) are supplied starting in the fourth cycle, which is not shown.
7. This command allows the user to swap between available Page Buffers (0 or 1).
8. These commands reconfigure the RY/BY# output to one of two pulse-modes or enable and disable the RY/BY# function.
9. Program address, PA, is the destination address in the flash array which must match the source address in the Page
Buffer. Refer to the 16-Mbit Flash Product Family User’s Manual
.
10. BCL = 00H corresponds to a byte count of 1. Similarly, WCL = 00H corresponds to a word count of 1.
11.
To ensure that the DD28F032SA’s power consumption during sleep mode reads the deep power-down current level, the
system also needs to de-select the chip by taking either or both CE
0
# or CE
1
#/CE
2
# high.
12. The upper byte of the data bus (DQ
8
–15
) during command programs is a
“Don’t Care” in x16 operation of the device.
5.5 Compatible Status Register
WSMS
ESS
ES
DWS
VPPS
R
R
R
7
6
5
4
3
2
1
0
NOTES:
CSR.7 = WRITE STATE MACHINE STATUS
1 = Ready
0 = Busy
RY/BY# output or WSMS bit must be checked to
determine completion of an operation (erase
suspend, block erase or data program) before
the appropriate Status bit (ESS, ES or DWS) is
checked for success.
CSR.6 = ERASE-SUSPEND STATUS
1 = Erase Suspended
0 = Erase In Progress/Completed
CSR.5 = ERASE STATUS
1 = Error in Block Erasure
0 = Successful Block Erase
If DWS and ES are set to
“1” during a block
erase attempt, an improper command sequence
was entered. Clear the CSR and attempt the
operation again.
CSR.4 = DATA WRITE STATUS
1 = Error in Data Program
0 = Data Program Successful
CSR.3 = V
PP
STATUS
1 = V
PP
Low Detect, Operation Abort
0 = V
PP
OK
The VPPS bit, unlike an A/D converter, does not
provide continuous indication of V
level. The
WSM interrogates V
’s level only after the Data
Program or Block Erase command sequences
have been entered, and informs the system if
V
has not been switched on. VPPS is not
guaranteed to report accurate feedback between
V
PPL
and V
PPH
.
CSR.2
–0 = RESERVED FOR FUTURE ENHANCEMENTS
These bits are reserved for future use; mask them out when polling the CSR.
相關(guān)PDF資料
PDF描述
DD28F032SA-080 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
DD28F032SA-100 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY
DD28F032SA-150 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
DD28F032SA100 x8/x16 Flash EEPROM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DD28F032SA-080 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
DD28F032SA100 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
DD28F032SA-100 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
DD28F032SA-150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
DD28F032SA70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM