| 型號(hào) | 廠商 | 描述 |
| itr20403 2 3 4 5 6 7 8 |
Everlight Electronic Co., Ltd. | OPTO INTERRUPTER ITR |
| itr8105 2 3 4 5 6 7 8 |
Everlight Electronic Co., Ltd. | Gallium Arsenide Infrared Emitting Diode |
| itr8307tr8 2 3 4 5 6 7 8 9 |
Everlight Electronic Co., Ltd. | Opto Interrupter |
| itr9606 2 3 4 5 6 |
Everlight Electronic Co., Ltd. | Opto Interrupter |
| itr9608 2 3 4 5 6 |
Everlight Electronic Co., Ltd. | Opto Interrupter |
| itr9702 2 3 4 5 6 7 8 |
Everlight Electronic Co., Ltd. | Gallium arsenide infrared emitting diode which is coupled with a silicon photo transistor in a plastic housing |
| itr9907 2 3 4 5 6 7 8 9 |
Everlight Electronic Co., Ltd. | Reflective Interrupter |
| j110 2 3 4 |
ON SEMICONDUCTOR | JFET General Purpose N Channel Depletion(N溝道耗盡型通用JFET) |
| j24aq |
National Semiconductor Corporation | CERDIP 24 LEAD EPROM SMALL WINDOW |
| j308 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | JFET VHF/UHF Amplifiers |
| j309 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | JFET VHF/UHF Amplifiers |
| j310 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | JFET VHF/UHF Amplifiers |
| j309 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel RF Amplifier |
| j308 2 3 4 5 6 7 8 |
CALOGIC LLC | N-Channel JFET High Frequency Amplifier |
| j309 2 3 4 5 6 7 8 |
CALOGIC LLC | N-Channel JFET High Frequency Amplifier |
| j310 2 3 4 5 6 7 8 |
CALOGIC LLC | N-Channel JFET High Frequency Amplifier |
| j308 2 3 4 5 6 7 8 |
Linear Integrated Systems | SINGLE N-CHANNEL HIGH FREQUENCY JFET |
| j309 2 3 4 5 6 7 8 |
Linear Integrated Systems | SINGLE N-CHANNEL HIGH FREQUENCY JFET |
| j310 2 3 4 5 6 7 8 |
Linear Integrated Systems | SINGLE N-CHANNEL HIGH FREQUENCY JFET |
| j680 2 3 4 5 |
Toshiba Corporation | Field Effect Transistor Silicon P-Channel MOS Type (ヰ-MOS V) |
| j882 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
Electronic Theatre Controls, Inc. | Mini size of Discrete semiconductor elements |
| jan109t 2 3 |
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP | 5 -VOLT FIXED VOLTAGE REGULATORS |
| jan117k 2 3 4 5 6 7 8 |
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP | GT 6C 6#16 PIN RECP BOX |
| jan117t 2 3 4 5 6 7 8 |
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP | GT 6C 6#16 SKT RECP BOX |
| jan1524j 2 3 4 5 6 |
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP | GT 4C 4#12 SKT RECP BOX |
| jan1525aj 2 3 4 5 6 7 |
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP | GT 10C 10#16 SKT RECP BOX |
| jan1527aj 2 3 4 5 6 7 |
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP | GT 13C 13#16 PIN RECP BOX |
| jan1526bj 2 3 4 5 6 7 8 9 |
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP | GT 5C 5#16 PIN RECP BOX |
| jan1n1126a 2 |
MICROSEMI CORP-LAWRENCE | Silicon Power Rectifier |
| jan1n1202a 2 |
MICROSEMI CORP-LAWRENCE | Military Silicon Power Rectifier |
| jan1n270 |
Microsemi Corporation | Optimized for Radio Frequency Response |
| jan1n276 |
Microsemi Corporation | Germanium Diodes |
| jan1n2808b 2 |
MICROSEMI CORP-LAWRENCE | GT 2C 2#8 PIN RECP BOX |
| jan1n2835 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2844ra 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2844rb 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2845rb 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n4557ra 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n4557rb 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n4558ra 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2804 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2804a 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2804b 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2804r 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2804ra 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2804rb 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2805 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2805a 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2805b 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| jan1n2805r 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |